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Growth of self-organized InAs quantum dots on InP by solid-source molecular beam epitaxy

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Growth of self-organized InAs quantum dots on InP by solid-source molecular beam epitaxy. / Zhuang, Qiandong; Yoon, S. F.; Zheng, H. Q.; Yuan, K. H.

In: Journal of Crystal Growth, Vol. 216, No. 1-4, 2000, p. 57-61.

Research output: Contribution to journalJournal articlepeer-review

Harvard

Zhuang, Q, Yoon, SF, Zheng, HQ & Yuan, KH 2000, 'Growth of self-organized InAs quantum dots on InP by solid-source molecular beam epitaxy', Journal of Crystal Growth, vol. 216, no. 1-4, pp. 57-61. https://doi.org/10.1016/S0022-0248(00)00375-4

APA

Zhuang, Q., Yoon, S. F., Zheng, H. Q., & Yuan, K. H. (2000). Growth of self-organized InAs quantum dots on InP by solid-source molecular beam epitaxy. Journal of Crystal Growth, 216(1-4), 57-61. https://doi.org/10.1016/S0022-0248(00)00375-4

Vancouver

Author

Zhuang, Qiandong ; Yoon, S. F. ; Zheng, H. Q. ; Yuan, K. H. / Growth of self-organized InAs quantum dots on InP by solid-source molecular beam epitaxy. In: Journal of Crystal Growth. 2000 ; Vol. 216, No. 1-4. pp. 57-61.

Bibtex

@article{0cabe83805434a38a07762c521b4843f,
title = "Growth of self-organized InAs quantum dots on InP by solid-source molecular beam epitaxy",
abstract = "Self-organized InAs quantum dots (QDs) on InP (1 0 0) substrate have been prepared by solid-source molecular-beam epitaxy (SSMBE). Atomic force microscopy (AFM) examination shows that the InAs QDs possess low aspect ratio (1 : 17) of height vs. diameter. The low-temperature photoluminescence (PL) behavior of the QDs is characterized by a 65 meV PL linewidth at ∼0.8 eV, with three other emissions, which correspond to the various thicknesses of InAs wetting layers. It is deduced that the InAs wetting layers exceeded the intended InAs deposition, which is attributed to unintentional As/P exchange reaction. This excess material is further confirmed by XRD measurements, and indicates that effective exchange occurs even at low temperature (500°C) for SSMBE growth. No significant change in the QD emission peak is observed in the sample grown at high temperature, indicating the absence of any significant As/P exchange reaction in the QDs.",
keywords = "InAs/InP, AFM, Self-organized quantum dots, SSMBE, PL",
author = "Qiandong Zhuang and Yoon, {S. F.} and Zheng, {H. Q.} and Yuan, {K. H.}",
year = "2000",
doi = "10.1016/S0022-0248(00)00375-4",
language = "English",
volume = "216",
pages = "57--61",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-4",

}

RIS

TY - JOUR

T1 - Growth of self-organized InAs quantum dots on InP by solid-source molecular beam epitaxy

AU - Zhuang, Qiandong

AU - Yoon, S. F.

AU - Zheng, H. Q.

AU - Yuan, K. H.

PY - 2000

Y1 - 2000

N2 - Self-organized InAs quantum dots (QDs) on InP (1 0 0) substrate have been prepared by solid-source molecular-beam epitaxy (SSMBE). Atomic force microscopy (AFM) examination shows that the InAs QDs possess low aspect ratio (1 : 17) of height vs. diameter. The low-temperature photoluminescence (PL) behavior of the QDs is characterized by a 65 meV PL linewidth at ∼0.8 eV, with three other emissions, which correspond to the various thicknesses of InAs wetting layers. It is deduced that the InAs wetting layers exceeded the intended InAs deposition, which is attributed to unintentional As/P exchange reaction. This excess material is further confirmed by XRD measurements, and indicates that effective exchange occurs even at low temperature (500°C) for SSMBE growth. No significant change in the QD emission peak is observed in the sample grown at high temperature, indicating the absence of any significant As/P exchange reaction in the QDs.

AB - Self-organized InAs quantum dots (QDs) on InP (1 0 0) substrate have been prepared by solid-source molecular-beam epitaxy (SSMBE). Atomic force microscopy (AFM) examination shows that the InAs QDs possess low aspect ratio (1 : 17) of height vs. diameter. The low-temperature photoluminescence (PL) behavior of the QDs is characterized by a 65 meV PL linewidth at ∼0.8 eV, with three other emissions, which correspond to the various thicknesses of InAs wetting layers. It is deduced that the InAs wetting layers exceeded the intended InAs deposition, which is attributed to unintentional As/P exchange reaction. This excess material is further confirmed by XRD measurements, and indicates that effective exchange occurs even at low temperature (500°C) for SSMBE growth. No significant change in the QD emission peak is observed in the sample grown at high temperature, indicating the absence of any significant As/P exchange reaction in the QDs.

KW - InAs/InP

KW - AFM

KW - Self-organized quantum dots

KW - SSMBE

KW - PL

U2 - 10.1016/S0022-0248(00)00375-4

DO - 10.1016/S0022-0248(00)00375-4

M3 - Journal article

VL - 216

SP - 57

EP - 61

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4

ER -