Rights statement: This is the author’s version of a work that was accepted for publication in Physica E. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Physica E, 82, 2016 DOI: 10.1016/j.physe.2015.09.005
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Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
}
TY - JOUR
T1 - Hexagonal-boron nitride substrates for electroburnt graphene nanojunctions
AU - Sadeghi, Hatef
AU - Sangtarash, Sara
AU - Lambert, Colin
N1 - This is the author’s version of a work that was accepted for publication in Physica E. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Physica E, 82, 2016 DOI: 10.1016/j.physe.2015.09.005
PY - 2016/8
Y1 - 2016/8
N2 - We examine the effect of a hexagonal boron nitride (hBN) substrate on electron transport through graphene nanojunctions just before gap formation. Junctions in vacuum and on hBN are formed using classical molecular dynamics to create initial structures, followed by relaxation using density functional theory. We find that the hBN only slightly reduces the current through the junctions at low biases. Furthermore due to quantum interference at the last moments of breaking, the current though a single carbon filament spanning the gap is found to be higher than the current through two filaments spanning the gap in parallel. This feature is present both in the presence of absence of hBN.
AB - We examine the effect of a hexagonal boron nitride (hBN) substrate on electron transport through graphene nanojunctions just before gap formation. Junctions in vacuum and on hBN are formed using classical molecular dynamics to create initial structures, followed by relaxation using density functional theory. We find that the hBN only slightly reduces the current through the junctions at low biases. Furthermore due to quantum interference at the last moments of breaking, the current though a single carbon filament spanning the gap is found to be higher than the current through two filaments spanning the gap in parallel. This feature is present both in the presence of absence of hBN.
KW - Molecular electronics
KW - Electroburning
KW - Graphene
KW - Boron nitride
KW - Quantum interference
U2 - 10.1016/j.physe.2015.09.005
DO - 10.1016/j.physe.2015.09.005
M3 - Journal article
VL - 82
SP - 12
EP - 15
JO - Physica E: Low-dimensional Systems and Nanostructures
JF - Physica E: Low-dimensional Systems and Nanostructures
SN - 1386-9477
ER -