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  • 1509.02851

    Rights statement: This is the author’s version of a work that was accepted for publication in Physica E. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Physica E, 82, 2016 DOI: 10.1016/j.physe.2015.09.005

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Hexagonal-boron nitride substrates for electroburnt graphene nanojunctions

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Hexagonal-boron nitride substrates for electroburnt graphene nanojunctions. / Sadeghi, Hatef; Sangtarash, Sara; Lambert, Colin.
In: Physica E: Low-dimensional Systems and Nanostructures, Vol. 82, 08.2016, p. 12-15.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

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Sadeghi H, Sangtarash S, Lambert C. Hexagonal-boron nitride substrates for electroburnt graphene nanojunctions. Physica E: Low-dimensional Systems and Nanostructures. 2016 Aug;82:12-15. Epub 2015 Sept 18. doi: 10.1016/j.physe.2015.09.005

Author

Sadeghi, Hatef ; Sangtarash, Sara ; Lambert, Colin. / Hexagonal-boron nitride substrates for electroburnt graphene nanojunctions. In: Physica E: Low-dimensional Systems and Nanostructures. 2016 ; Vol. 82. pp. 12-15.

Bibtex

@article{026bf814d76340bbbec08a5763bbe5cf,
title = "Hexagonal-boron nitride substrates for electroburnt graphene nanojunctions",
abstract = "We examine the effect of a hexagonal boron nitride (hBN) substrate on electron transport through graphene nanojunctions just before gap formation. Junctions in vacuum and on hBN are formed using classical molecular dynamics to create initial structures, followed by relaxation using density functional theory. We find that the hBN only slightly reduces the current through the junctions at low biases. Furthermore due to quantum interference at the last moments of breaking, the current though a single carbon filament spanning the gap is found to be higher than the current through two filaments spanning the gap in parallel. This feature is present both in the presence of absence of hBN.",
keywords = "Molecular electronics, Electroburning, Graphene, Boron nitride, Quantum interference",
author = "Hatef Sadeghi and Sara Sangtarash and Colin Lambert",
note = "This is the author{\textquoteright}s version of a work that was accepted for publication in Physica E. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Physica E, 82, 2016 DOI: 10.1016/j.physe.2015.09.005 ",
year = "2016",
month = aug,
doi = "10.1016/j.physe.2015.09.005",
language = "English",
volume = "82",
pages = "12--15",
journal = "Physica E: Low-dimensional Systems and Nanostructures",
issn = "1386-9477",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Hexagonal-boron nitride substrates for electroburnt graphene nanojunctions

AU - Sadeghi, Hatef

AU - Sangtarash, Sara

AU - Lambert, Colin

N1 - This is the author’s version of a work that was accepted for publication in Physica E. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Physica E, 82, 2016 DOI: 10.1016/j.physe.2015.09.005

PY - 2016/8

Y1 - 2016/8

N2 - We examine the effect of a hexagonal boron nitride (hBN) substrate on electron transport through graphene nanojunctions just before gap formation. Junctions in vacuum and on hBN are formed using classical molecular dynamics to create initial structures, followed by relaxation using density functional theory. We find that the hBN only slightly reduces the current through the junctions at low biases. Furthermore due to quantum interference at the last moments of breaking, the current though a single carbon filament spanning the gap is found to be higher than the current through two filaments spanning the gap in parallel. This feature is present both in the presence of absence of hBN.

AB - We examine the effect of a hexagonal boron nitride (hBN) substrate on electron transport through graphene nanojunctions just before gap formation. Junctions in vacuum and on hBN are formed using classical molecular dynamics to create initial structures, followed by relaxation using density functional theory. We find that the hBN only slightly reduces the current through the junctions at low biases. Furthermore due to quantum interference at the last moments of breaking, the current though a single carbon filament spanning the gap is found to be higher than the current through two filaments spanning the gap in parallel. This feature is present both in the presence of absence of hBN.

KW - Molecular electronics

KW - Electroburning

KW - Graphene

KW - Boron nitride

KW - Quantum interference

U2 - 10.1016/j.physe.2015.09.005

DO - 10.1016/j.physe.2015.09.005

M3 - Journal article

VL - 82

SP - 12

EP - 15

JO - Physica E: Low-dimensional Systems and Nanostructures

JF - Physica E: Low-dimensional Systems and Nanostructures

SN - 1386-9477

ER -