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    Rights statement: Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 106 (10), 2015 and may be found at http://scitation.aip.org/content/aip/journal/apl/106/10/10.1063/1.4914895

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Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

Research output: Contribution to journalJournal article

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  • Hai-ming Ji
  • Baolai Liang
  • Paul J. Simmonds
  • Bor-chau Juang
  • Tao Yang
  • Robert J. Young
  • Diana L. Huffaker
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Article number103104
<mark>Journal publication date</mark>9/03/2015
<mark>Journal</mark>Applied Physics Letters
Issue number10
Volume106
Number of pages5
Publication statusPublished
Original languageEnglish

Abstract

We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL. These hybrid QD structures show potential for high efficiency QD solar cell applications.

Bibliographic note

Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 106 (10), 2015 and may be found at http://scitation.aip.org/content/aip/journal/apl/106/10/10.1063/1.4914895