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    Rights statement: Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 106 (10), 2015 and may be found at http://scitation.aip.org/content/aip/journal/apl/106/10/10.1063/1.4914895

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Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence. / Ji, Hai-ming; Liang, Baolai; Simmonds, Paul J. et al.
In: Applied Physics Letters, Vol. 106, No. 10, 103104, 09.03.2015.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Ji, H, Liang, B, Simmonds, PJ, Juang, B, Yang, T, Young, RJ & Huffaker, DL 2015, 'Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence', Applied Physics Letters, vol. 106, no. 10, 103104. https://doi.org/10.1063/1.4914895

APA

Ji, H., Liang, B., Simmonds, P. J., Juang, B., Yang, T., Young, R. J., & Huffaker, D. L. (2015). Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence. Applied Physics Letters, 106(10), Article 103104. https://doi.org/10.1063/1.4914895

Vancouver

Ji H, Liang B, Simmonds PJ, Juang B, Yang T, Young RJ et al. Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence. Applied Physics Letters. 2015 Mar 9;106(10):103104. doi: 10.1063/1.4914895

Author

Ji, Hai-ming ; Liang, Baolai ; Simmonds, Paul J. et al. / Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence. In: Applied Physics Letters. 2015 ; Vol. 106, No. 10.

Bibtex

@article{0a48f449c4484b11b34b89bec98966f4,
title = "Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence",
abstract = "We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL. These hybrid QD structures show potential for high efficiency QD solar cell applications.",
author = "Hai-ming Ji and Baolai Liang and Simmonds, {Paul J.} and Bor-chau Juang and Tao Yang and Young, {Robert J.} and Huffaker, {Diana L.}",
note = " Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 106 (10), 2015 and may be found at http://scitation.aip.org/content/aip/journal/apl/106/10/10.1063/1.4914895 ",
year = "2015",
month = mar,
day = "9",
doi = "10.1063/1.4914895",
language = "English",
volume = "106",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "10",

}

RIS

TY - JOUR

T1 - Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

AU - Ji, Hai-ming

AU - Liang, Baolai

AU - Simmonds, Paul J.

AU - Juang, Bor-chau

AU - Yang, Tao

AU - Young, Robert J.

AU - Huffaker, Diana L.

N1 - Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 106 (10), 2015 and may be found at http://scitation.aip.org/content/aip/journal/apl/106/10/10.1063/1.4914895

PY - 2015/3/9

Y1 - 2015/3/9

N2 - We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL. These hybrid QD structures show potential for high efficiency QD solar cell applications.

AB - We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL. These hybrid QD structures show potential for high efficiency QD solar cell applications.

U2 - 10.1063/1.4914895

DO - 10.1063/1.4914895

M3 - Journal article

VL - 106

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

M1 - 103104

ER -