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    Rights statement: Copyright 2018 American Institute of Physics. The following article appeared in Applied Physics Letters, 112, 2018 and may be found at http://dx.doi.org/10.1063/1.5006883 This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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Impact ionisation in Al0.9Ga0.1As0.08Sb0.92 for Sb-based avalanche photodiodes

Research output: Contribution to journalJournal article

Published
Article number021103
<mark>Journal publication date</mark>01/2018
<mark>Journal</mark>Applied Physics Letters
Issue number2
Volume112
Number of pages4
Publication statusPublished
Early online date9/01/18
Original languageEnglish

Abstract

We report the impact ionisation coefficients of the quaternary alloy Al0.9Ga0.1As0.08Sb0.92 lattice matched to GaSb substrates within the field range of 150 to 550 kV cm-1 using p-i-n and n-i-p diodes of various intrinsic thicknesses. The coefficients were found with an evolutionary fitting algorithm using a non-local recurrence based multiplication model and a variable electric field profile. These coefficients not only indicate that an avalanche photodiode can be designed to be function in the mid-wave infrared, but also can be operated at lower voltages. This is due to the high magnitude of the impact ionisation coefficients at relatively low fields compared to other III-V materials typically used in avalanche multiplication regions.

Bibliographic note

Copyright 2018 American Institute of Physics. The following article appeared in Applied Physics Letters, 112, 2018 and may be found at http://dx.doi.org/10.1063/1.5006883 This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.