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    Rights statement: Copyright 2018 American Institute of Physics. The following article appeared in Applied Physics Letters, 112, 2018 and may be found at http://dx.doi.org/10.1063/1.5006883 This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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Impact ionisation in Al0.9Ga0.1As0.08Sb0.92 for Sb-based avalanche photodiodes

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Impact ionisation in Al0.9Ga0.1As0.08Sb0.92 for Sb-based avalanche photodiodes. / Collins, Xiao; Craig, Adam Patrick; Roblin, T.; Marshall, Andrew Robert Julian.

In: Applied Physics Letters, Vol. 112, No. 2, 021103, 01.2018.

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@article{33ca50c32e704bea963e5b4604669a86,
title = "Impact ionisation in Al0.9Ga0.1As0.08Sb0.92 for Sb-based avalanche photodiodes",
abstract = "We report the impact ionisation coefficients of the quaternary alloy Al0.9Ga0.1As0.08Sb0.92 lattice matched to GaSb substrates within the field range of 150 to 550 kV cm-1 using p-i-n and n-i-p diodes of various intrinsic thicknesses. The coefficients were found with an evolutionary fitting algorithm using a non-local recurrence based multiplication model and a variable electric field profile. These coefficients not only indicate that an avalanche photodiode can be designed to be function in the mid-wave infrared, but also can be operated at lower voltages. This is due to the high magnitude of the impact ionisation coefficients at relatively low fields compared to other III-V materials typically used in avalanche multiplication regions.",
keywords = "Semiconductors, Ionization processes, Infrared radiation, Natural disasters, Gas discharges",
author = "Xiao Collins and Craig, {Adam Patrick} and T. Roblin and Marshall, {Andrew Robert Julian}",
note = "Copyright 2018 American Institute of Physics. The following article appeared in Applied Physics Letters, 112, 2018 and may be found at http://dx.doi.org/10.1063/1.5006883 This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.",
year = "2018",
month = "1",
doi = "10.1063/1.5006883",
language = "English",
volume = "112",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "2",

}

RIS

TY - JOUR

T1 - Impact ionisation in Al0.9Ga0.1As0.08Sb0.92 for Sb-based avalanche photodiodes

AU - Collins, Xiao

AU - Craig, Adam Patrick

AU - Roblin, T.

AU - Marshall, Andrew Robert Julian

N1 - Copyright 2018 American Institute of Physics. The following article appeared in Applied Physics Letters, 112, 2018 and may be found at http://dx.doi.org/10.1063/1.5006883 This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

PY - 2018/1

Y1 - 2018/1

N2 - We report the impact ionisation coefficients of the quaternary alloy Al0.9Ga0.1As0.08Sb0.92 lattice matched to GaSb substrates within the field range of 150 to 550 kV cm-1 using p-i-n and n-i-p diodes of various intrinsic thicknesses. The coefficients were found with an evolutionary fitting algorithm using a non-local recurrence based multiplication model and a variable electric field profile. These coefficients not only indicate that an avalanche photodiode can be designed to be function in the mid-wave infrared, but also can be operated at lower voltages. This is due to the high magnitude of the impact ionisation coefficients at relatively low fields compared to other III-V materials typically used in avalanche multiplication regions.

AB - We report the impact ionisation coefficients of the quaternary alloy Al0.9Ga0.1As0.08Sb0.92 lattice matched to GaSb substrates within the field range of 150 to 550 kV cm-1 using p-i-n and n-i-p diodes of various intrinsic thicknesses. The coefficients were found with an evolutionary fitting algorithm using a non-local recurrence based multiplication model and a variable electric field profile. These coefficients not only indicate that an avalanche photodiode can be designed to be function in the mid-wave infrared, but also can be operated at lower voltages. This is due to the high magnitude of the impact ionisation coefficients at relatively low fields compared to other III-V materials typically used in avalanche multiplication regions.

KW - Semiconductors

KW - Ionization processes

KW - Infrared radiation

KW - Natural disasters

KW - Gas discharges

U2 - 10.1063/1.5006883

DO - 10.1063/1.5006883

M3 - Journal article

VL - 112

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 2

M1 - 021103

ER -