Rights statement: Copyright 2018 American Institute of Physics. The following article appeared in Applied Physics Letters, 112, 2018 and may be found at http://dx.doi.org/10.1063/1.5006883 This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
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Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
}
TY - JOUR
T1 - Impact ionisation in Al0.9Ga0.1As0.08Sb0.92 for Sb-based avalanche photodiodes
AU - Collins, Xiao
AU - Craig, Adam Patrick
AU - Roblin, T.
AU - Marshall, Andrew Robert Julian
N1 - Copyright 2018 American Institute of Physics. The following article appeared in Applied Physics Letters, 112, 2018 and may be found at http://dx.doi.org/10.1063/1.5006883 This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
PY - 2018/1
Y1 - 2018/1
N2 - We report the impact ionisation coefficients of the quaternary alloy Al0.9Ga0.1As0.08Sb0.92 lattice matched to GaSb substrates within the field range of 150 to 550 kV cm-1 using p-i-n and n-i-p diodes of various intrinsic thicknesses. The coefficients were found with an evolutionary fitting algorithm using a non-local recurrence based multiplication model and a variable electric field profile. These coefficients not only indicate that an avalanche photodiode can be designed to be function in the mid-wave infrared, but also can be operated at lower voltages. This is due to the high magnitude of the impact ionisation coefficients at relatively low fields compared to other III-V materials typically used in avalanche multiplication regions.
AB - We report the impact ionisation coefficients of the quaternary alloy Al0.9Ga0.1As0.08Sb0.92 lattice matched to GaSb substrates within the field range of 150 to 550 kV cm-1 using p-i-n and n-i-p diodes of various intrinsic thicknesses. The coefficients were found with an evolutionary fitting algorithm using a non-local recurrence based multiplication model and a variable electric field profile. These coefficients not only indicate that an avalanche photodiode can be designed to be function in the mid-wave infrared, but also can be operated at lower voltages. This is due to the high magnitude of the impact ionisation coefficients at relatively low fields compared to other III-V materials typically used in avalanche multiplication regions.
KW - Semiconductors
KW - Ionization processes
KW - Infrared radiation
KW - Natural disasters
KW - Gas discharges
U2 - 10.1063/1.5006883
DO - 10.1063/1.5006883
M3 - Journal article
VL - 112
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 2
M1 - 021103
ER -