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Impact Ionization in InAs Electron Avalanche Photodiodes

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Impact Ionization in InAs Electron Avalanche Photodiodes. / Marshall, Andrew R. J.; David, John P. R.; Tan, Chee Hing.
In: IEEE Transactions on Electron Devices, Vol. 57, No. 10, 10.2010, p. 2631-2638.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Marshall, ARJ, David, JPR & Tan, CH 2010, 'Impact Ionization in InAs Electron Avalanche Photodiodes', IEEE Transactions on Electron Devices, vol. 57, no. 10, pp. 2631-2638. https://doi.org/10.1109/TED.2010.2058330

APA

Marshall, A. R. J., David, J. P. R., & Tan, C. H. (2010). Impact Ionization in InAs Electron Avalanche Photodiodes. IEEE Transactions on Electron Devices, 57(10), 2631-2638. https://doi.org/10.1109/TED.2010.2058330

Vancouver

Marshall ARJ, David JPR, Tan CH. Impact Ionization in InAs Electron Avalanche Photodiodes. IEEE Transactions on Electron Devices. 2010 Oct;57(10):2631-2638. doi: 10.1109/TED.2010.2058330

Author

Marshall, Andrew R. J. ; David, John P. R. ; Tan, Chee Hing. / Impact Ionization in InAs Electron Avalanche Photodiodes. In: IEEE Transactions on Electron Devices. 2010 ; Vol. 57, No. 10. pp. 2631-2638.

Bibtex

@article{b6423b83aa044761acf10892396d2eee,
title = "Impact Ionization in InAs Electron Avalanche Photodiodes",
abstract = "A systematic study of impact ionization, avalanche multiplication, and excess noise in InAs diodes has been carried out, confirming that avalanche multiplication is dominated by the impact ionization of electrons. This results in highly desirable {"}electron avalanche photodiode{"} characteristics previously only demonstrated in HgCdTe diodes, which are discussed in detail. The suppression of excess noise by nonlocal effects, to levels below the local model minimum of F = 2, is explained. An electron ionization coefficient is calculated and shown to be capable of modeling the electron impact ionization, which differs characteristically from that in wider bandgap III-V materials.",
keywords = "Avalanche photodiode (APD) , InAs , electron avalanche photodiode (e-APD) , impact ionization , ionization coefficient",
author = "Marshall, {Andrew R. J.} and David, {John P. R.} and Tan, {Chee Hing}",
year = "2010",
month = oct,
doi = "10.1109/TED.2010.2058330",
language = "English",
volume = "57",
pages = "2631--2638",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "10",

}

RIS

TY - JOUR

T1 - Impact Ionization in InAs Electron Avalanche Photodiodes

AU - Marshall, Andrew R. J.

AU - David, John P. R.

AU - Tan, Chee Hing

PY - 2010/10

Y1 - 2010/10

N2 - A systematic study of impact ionization, avalanche multiplication, and excess noise in InAs diodes has been carried out, confirming that avalanche multiplication is dominated by the impact ionization of electrons. This results in highly desirable "electron avalanche photodiode" characteristics previously only demonstrated in HgCdTe diodes, which are discussed in detail. The suppression of excess noise by nonlocal effects, to levels below the local model minimum of F = 2, is explained. An electron ionization coefficient is calculated and shown to be capable of modeling the electron impact ionization, which differs characteristically from that in wider bandgap III-V materials.

AB - A systematic study of impact ionization, avalanche multiplication, and excess noise in InAs diodes has been carried out, confirming that avalanche multiplication is dominated by the impact ionization of electrons. This results in highly desirable "electron avalanche photodiode" characteristics previously only demonstrated in HgCdTe diodes, which are discussed in detail. The suppression of excess noise by nonlocal effects, to levels below the local model minimum of F = 2, is explained. An electron ionization coefficient is calculated and shown to be capable of modeling the electron impact ionization, which differs characteristically from that in wider bandgap III-V materials.

KW - Avalanche photodiode (APD)

KW - InAs

KW - electron avalanche photodiode (e-APD)

KW - impact ionization

KW - ionization coefficient

U2 - 10.1109/TED.2010.2058330

DO - 10.1109/TED.2010.2058330

M3 - Journal article

VL - 57

SP - 2631

EP - 2638

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 10

ER -