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    Rights statement: Copyright 2019 American Institute of Physics. The following article appeared in Applied Physics Letters, 114, 2019 and may be found at https://doi.org/10.1063/1.5098957 This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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InAs/GaSb superlattice interband cascade light emitting diodes with high output power and high wall-plug efficiency

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InAs/GaSb superlattice interband cascade light emitting diodes with high output power and high wall-plug efficiency. / Lu, Qi; Krier, Anthony; Zhou, Yi; Cai, Xuliang; Xu, Zhicheng; Chen, Jianxin; He, Li.

In: Applied Physics Letters, Vol. 114, No. 25, 253507, 27.06.2019.

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Lu, Qi ; Krier, Anthony ; Zhou, Yi ; Cai, Xuliang ; Xu, Zhicheng ; Chen, Jianxin ; He, Li. / InAs/GaSb superlattice interband cascade light emitting diodes with high output power and high wall-plug efficiency. In: Applied Physics Letters. 2019 ; Vol. 114, No. 25.

Bibtex

@article{9e56341286fd44d59e6bd0bca8de80bc,
title = "InAs/GaSb superlattice interband cascade light emitting diodes with high output power and high wall-plug efficiency",
abstract = "In this work, 2-stage and 5-stage mid-infrared superlattice interband cascade light emitting diodes (ICLEDs) were fabricated and studied at different temperatures. The ICLEDs were composed of InAs/GaAsSb active regions, InAs/AlAsSb injection regions, and GaAsSb/AlAsSb tunneling regions. The devices exhibited high output power and very low series resistance, indicating efficient carrier blocking and tunneling in the designed structure. Radiances of 0.73 W/cm2 sr and 0.38 W/cm2 sr were achieved at 300 K for the 5-stage and 2-stage ICLEDs, respectively. With an output power of 3.56 mW, the wall-plug efficiency of the 5-stage ICLED reached 0.5{\%} at 80 K, under an injection current of 350 mA. The efficiency was largely maintained in the same range with increasing current injection. The results showed that ICLEDs have great potential for mid-infrared light emitting diode applications requiring large output power and high wall-plug efficiency.",
keywords = "interband cascade structure, mid-infrared, molecular beam epitaxy",
author = "Qi Lu and Anthony Krier and Yi Zhou and Xuliang Cai and Zhicheng Xu and Jianxin Chen and Li He",
note = "Copyright 2019 American Institute of Physics. The following article appeared in Applied Physics Letters, 114, 2019 and may be found at https://doi.org/10.1063/1.5098957 This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.",
year = "2019",
month = "6",
day = "27",
doi = "10.1063/1.5098957",
language = "English",
volume = "114",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "25",

}

RIS

TY - JOUR

T1 - InAs/GaSb superlattice interband cascade light emitting diodes with high output power and high wall-plug efficiency

AU - Lu, Qi

AU - Krier, Anthony

AU - Zhou, Yi

AU - Cai, Xuliang

AU - Xu, Zhicheng

AU - Chen, Jianxin

AU - He, Li

N1 - Copyright 2019 American Institute of Physics. The following article appeared in Applied Physics Letters, 114, 2019 and may be found at https://doi.org/10.1063/1.5098957 This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

PY - 2019/6/27

Y1 - 2019/6/27

N2 - In this work, 2-stage and 5-stage mid-infrared superlattice interband cascade light emitting diodes (ICLEDs) were fabricated and studied at different temperatures. The ICLEDs were composed of InAs/GaAsSb active regions, InAs/AlAsSb injection regions, and GaAsSb/AlAsSb tunneling regions. The devices exhibited high output power and very low series resistance, indicating efficient carrier blocking and tunneling in the designed structure. Radiances of 0.73 W/cm2 sr and 0.38 W/cm2 sr were achieved at 300 K for the 5-stage and 2-stage ICLEDs, respectively. With an output power of 3.56 mW, the wall-plug efficiency of the 5-stage ICLED reached 0.5% at 80 K, under an injection current of 350 mA. The efficiency was largely maintained in the same range with increasing current injection. The results showed that ICLEDs have great potential for mid-infrared light emitting diode applications requiring large output power and high wall-plug efficiency.

AB - In this work, 2-stage and 5-stage mid-infrared superlattice interband cascade light emitting diodes (ICLEDs) were fabricated and studied at different temperatures. The ICLEDs were composed of InAs/GaAsSb active regions, InAs/AlAsSb injection regions, and GaAsSb/AlAsSb tunneling regions. The devices exhibited high output power and very low series resistance, indicating efficient carrier blocking and tunneling in the designed structure. Radiances of 0.73 W/cm2 sr and 0.38 W/cm2 sr were achieved at 300 K for the 5-stage and 2-stage ICLEDs, respectively. With an output power of 3.56 mW, the wall-plug efficiency of the 5-stage ICLED reached 0.5% at 80 K, under an injection current of 350 mA. The efficiency was largely maintained in the same range with increasing current injection. The results showed that ICLEDs have great potential for mid-infrared light emitting diode applications requiring large output power and high wall-plug efficiency.

KW - interband cascade structure

KW - mid-infrared

KW - molecular beam epitaxy

U2 - 10.1063/1.5098957

DO - 10.1063/1.5098957

M3 - Journal article

VL - 114

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 25

M1 - 253507

ER -