Rights statement: Copyright 2019 American Institute of Physics. The following article appeared in Applied Physics Letters, 114, 2019 and may be found at https://doi.org/10.1063/1.5098957 This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
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Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - InAs/GaSb superlattice interband cascade light emitting diodes with high output power and high wall-plug efficiency
AU - Lu, Qi
AU - Krier, Anthony
AU - Zhou, Yi
AU - Cai, Xuliang
AU - Xu, Zhicheng
AU - Chen, Jianxin
AU - He, Li
N1 - Copyright 2019 American Institute of Physics. The following article appeared in Applied Physics Letters, 114, 2019 and may be found at https://doi.org/10.1063/1.5098957 This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
PY - 2019/6/27
Y1 - 2019/6/27
N2 - In this work, 2-stage and 5-stage mid-infrared superlattice interband cascade light emitting diodes (ICLEDs) were fabricated and studied at different temperatures. The ICLEDs were composed of InAs/GaAsSb active regions, InAs/AlAsSb injection regions, and GaAsSb/AlAsSb tunneling regions. The devices exhibited high output power and very low series resistance, indicating efficient carrier blocking and tunneling in the designed structure. Radiances of 0.73 W/cm2 sr and 0.38 W/cm2 sr were achieved at 300 K for the 5-stage and 2-stage ICLEDs, respectively. With an output power of 3.56 mW, the wall-plug efficiency of the 5-stage ICLED reached 0.5% at 80 K, under an injection current of 350 mA. The efficiency was largely maintained in the same range with increasing current injection. The results showed that ICLEDs have great potential for mid-infrared light emitting diode applications requiring large output power and high wall-plug efficiency.
AB - In this work, 2-stage and 5-stage mid-infrared superlattice interband cascade light emitting diodes (ICLEDs) were fabricated and studied at different temperatures. The ICLEDs were composed of InAs/GaAsSb active regions, InAs/AlAsSb injection regions, and GaAsSb/AlAsSb tunneling regions. The devices exhibited high output power and very low series resistance, indicating efficient carrier blocking and tunneling in the designed structure. Radiances of 0.73 W/cm2 sr and 0.38 W/cm2 sr were achieved at 300 K for the 5-stage and 2-stage ICLEDs, respectively. With an output power of 3.56 mW, the wall-plug efficiency of the 5-stage ICLED reached 0.5% at 80 K, under an injection current of 350 mA. The efficiency was largely maintained in the same range with increasing current injection. The results showed that ICLEDs have great potential for mid-infrared light emitting diode applications requiring large output power and high wall-plug efficiency.
KW - interband cascade structure
KW - mid-infrared
KW - molecular beam epitaxy
U2 - 10.1063/1.5098957
DO - 10.1063/1.5098957
M3 - Journal article
VL - 114
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 25
M1 - 253507
ER -