Research output: Contribution to journal › Journal article
|<mark>Journal publication date</mark>||12/2006|
|<mark>Journal</mark>||Physica Status Solidi C|
|Number of pages||4|
|Early online date||6/11/06|
We report a brief overview of recent research developments on InAs/InP quantum dots (QDs). Eight-band k-p calculations are performed on single InAs/InP QDs, and the impact of substrate orientation ((311)B or (100)) on electronic and optical properties is studied. A configuration interaction model is used to determine few-particle states of these dots and a comparison with micro-photoluminescence experiments on single InAs/InP QDs is made. It is then demonstrated that high QDs density can be reached on such a system, leading to lateral coupling between dots. Calculations and (magnetophoto-) (photo-) (electro-) luminescence experiments are used to demonstrate that the lateral coupling leads to miniband effects, and to a better charge carrier redistribution between QDs for laser applications. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.