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InAs/InP quantum dots: from single to coupled dots applications

Research output: Contribution to Journal/MagazineJournal articlepeer-review

  • Charles Cornet
  • Andrei Schliwa
  • M. Hayne
  • N. Chauvin
  • Francois Dore
  • Jacky Even
  • Victor V. Moshchalkov
  • Dieter Bimberg
  • G. Bremond
  • C. Bru-Chevallier
  • M. Gendry
  • Slimane Loualiche
<mark>Journal publication date</mark>12/2006
<mark>Journal</mark>Physica Status Solidi C
Issue number11
Number of pages4
Pages (from-to)4039-4042
Publication StatusPublished
Early online date6/11/06
<mark>Original language</mark>English


We report a brief overview of recent research developments on InAs/InP quantum dots (QDs). Eight-band k-p calculations are performed on single InAs/InP QDs, and the impact of substrate orientation ((311)B or (100)) on electronic and optical properties is studied. A configuration interaction model is used to determine few-particle states of these dots and a comparison with micro-photoluminescence experiments on single InAs/InP QDs is made. It is then demonstrated that high QDs density can be reached on such a system, leading to lateral coupling between dots. Calculations and (magnetophoto-) (photo-) (electro-) luminescence experiments are used to demonstrate that the lateral coupling leads to miniband effects, and to a better charge carrier redistribution between QDs for laser applications. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.