Home > Research > Publications & Outputs > InAs/InP quantum dots

Research

Links

Text available via DOI:

Keywords

View graph of relations

InAs/InP quantum dots: from single to coupled dots applications

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Published

Standard

InAs/InP quantum dots: from single to coupled dots applications. / Cornet, Charles; Schliwa, Andrei; Hayne, M. et al.
In: Physica Status Solidi C, Vol. 3, No. 11, 12.2006, p. 4039-4042.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Cornet, C, Schliwa, A, Hayne, M, Chauvin, N, Dore, F, Even, J, Moshchalkov, VV, Bimberg, D, Bremond, G, Bru-Chevallier, C, Gendry, M & Loualiche, S 2006, 'InAs/InP quantum dots: from single to coupled dots applications', Physica Status Solidi C, vol. 3, no. 11, pp. 4039-4042. https://doi.org/10.1002/pssc.200671623

APA

Cornet, C., Schliwa, A., Hayne, M., Chauvin, N., Dore, F., Even, J., Moshchalkov, V. V., Bimberg, D., Bremond, G., Bru-Chevallier, C., Gendry, M., & Loualiche, S. (2006). InAs/InP quantum dots: from single to coupled dots applications. Physica Status Solidi C, 3(11), 4039-4042. https://doi.org/10.1002/pssc.200671623

Vancouver

Cornet C, Schliwa A, Hayne M, Chauvin N, Dore F, Even J et al. InAs/InP quantum dots: from single to coupled dots applications. Physica Status Solidi C. 2006 Dec;3(11):4039-4042. Epub 2006 Nov 6. doi: 10.1002/pssc.200671623

Author

Cornet, Charles ; Schliwa, Andrei ; Hayne, M. et al. / InAs/InP quantum dots : from single to coupled dots applications. In: Physica Status Solidi C. 2006 ; Vol. 3, No. 11. pp. 4039-4042.

Bibtex

@article{557e4c8b73ae488cb19422239dd71ef6,
title = "InAs/InP quantum dots: from single to coupled dots applications",
abstract = "We report a brief overview of recent research developments on InAs/InP quantum dots (QDs). Eight-band k-p calculations are performed on single InAs/InP QDs, and the impact of substrate orientation ((311)B or (100)) on electronic and optical properties is studied. A configuration interaction model is used to determine few-particle states of these dots and a comparison with micro-photoluminescence experiments on single InAs/InP QDs is made. It is then demonstrated that high QDs density can be reached on such a system, leading to lateral coupling between dots. Calculations and (magnetophoto-) (photo-) (electro-) luminescence experiments are used to demonstrate that the lateral coupling leads to miniband effects, and to a better charge carrier redistribution between QDs for laser applications. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",
keywords = "OPTICAL-PROPERTIES",
author = "Charles Cornet and Andrei Schliwa and M. Hayne and N. Chauvin and Francois Dore and Jacky Even and Moshchalkov, {Victor V.} and Dieter Bimberg and G. Bremond and C. Bru-Chevallier and M. Gendry and Slimane Loualiche",
year = "2006",
month = dec,
doi = "10.1002/pssc.200671623",
language = "English",
volume = "3",
pages = "4039--4042",
journal = "Physica Status Solidi C",
issn = "1610-1634",
publisher = "Wiley-VCH Verlag",
number = "11",

}

RIS

TY - JOUR

T1 - InAs/InP quantum dots

T2 - from single to coupled dots applications

AU - Cornet, Charles

AU - Schliwa, Andrei

AU - Hayne, M.

AU - Chauvin, N.

AU - Dore, Francois

AU - Even, Jacky

AU - Moshchalkov, Victor V.

AU - Bimberg, Dieter

AU - Bremond, G.

AU - Bru-Chevallier, C.

AU - Gendry, M.

AU - Loualiche, Slimane

PY - 2006/12

Y1 - 2006/12

N2 - We report a brief overview of recent research developments on InAs/InP quantum dots (QDs). Eight-band k-p calculations are performed on single InAs/InP QDs, and the impact of substrate orientation ((311)B or (100)) on electronic and optical properties is studied. A configuration interaction model is used to determine few-particle states of these dots and a comparison with micro-photoluminescence experiments on single InAs/InP QDs is made. It is then demonstrated that high QDs density can be reached on such a system, leading to lateral coupling between dots. Calculations and (magnetophoto-) (photo-) (electro-) luminescence experiments are used to demonstrate that the lateral coupling leads to miniband effects, and to a better charge carrier redistribution between QDs for laser applications. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AB - We report a brief overview of recent research developments on InAs/InP quantum dots (QDs). Eight-band k-p calculations are performed on single InAs/InP QDs, and the impact of substrate orientation ((311)B or (100)) on electronic and optical properties is studied. A configuration interaction model is used to determine few-particle states of these dots and a comparison with micro-photoluminescence experiments on single InAs/InP QDs is made. It is then demonstrated that high QDs density can be reached on such a system, leading to lateral coupling between dots. Calculations and (magnetophoto-) (photo-) (electro-) luminescence experiments are used to demonstrate that the lateral coupling leads to miniband effects, and to a better charge carrier redistribution between QDs for laser applications. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

KW - OPTICAL-PROPERTIES

U2 - 10.1002/pssc.200671623

DO - 10.1002/pssc.200671623

M3 - Journal article

VL - 3

SP - 4039

EP - 4042

JO - Physica Status Solidi C

JF - Physica Status Solidi C

SN - 1610-1634

IS - 11

ER -