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Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy. .

Research output: Contribution to journalJournal article

Published

Journal publication date21/12/2000
JournalJournal of Physics D-Applied Physics
Journal number24
Volume33
Number of pages5
Pages3156-3160
Original languageEnglish

Abstract

Electroluminescence has been observed at 3.3 mum from InAs quantum well LEDs grown from the liquid phase for the first time. A special rapid slider liquid phase epitaxial growth technique was used to produce the wells within the active region of an InAsSbP homojunction p-i-n LED. The light emission was attributed to type II recombination between confined electron and hole states at the InAsSbP/ InAs interfaces of the InAs quantum well. Intense electroluminescence emission was observed at low temperatures from a multi-interface LED which contained three InAs quantum wells in the i-region of the LED structure with emission peaking at 3.68 mum at 250 K.