Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy. .
AU - Krier, A.
AU - Sherstnev, V. V.
AU - Labadi, Z.
AU - Krier, S. E.
AU - Gao, H. H.
PY - 2000/12/21
Y1 - 2000/12/21
N2 - Electroluminescence has been observed at 3.3 mum from InAs quantum well LEDs grown from the liquid phase for the first time. A special rapid slider liquid phase epitaxial growth technique was used to produce the wells within the active region of an InAsSbP homojunction p-i-n LED. The light emission was attributed to type II recombination between confined electron and hole states at the InAsSbP/ InAs interfaces of the InAs quantum well. Intense electroluminescence emission was observed at low temperatures from a multi-interface LED which contained three InAs quantum wells in the i-region of the LED structure with emission peaking at 3.68 mum at 250 K.
AB - Electroluminescence has been observed at 3.3 mum from InAs quantum well LEDs grown from the liquid phase for the first time. A special rapid slider liquid phase epitaxial growth technique was used to produce the wells within the active region of an InAsSbP homojunction p-i-n LED. The light emission was attributed to type II recombination between confined electron and hole states at the InAsSbP/ InAs interfaces of the InAs quantum well. Intense electroluminescence emission was observed at low temperatures from a multi-interface LED which contained three InAs quantum wells in the i-region of the LED structure with emission peaking at 3.68 mum at 250 K.
U2 - 10.1088/0022-3727/33/24/305
DO - 10.1088/0022-3727/33/24/305
M3 - Journal article
VL - 33
SP - 3156
EP - 3160
JO - Journal of Physics D: Applied Physics
JF - Journal of Physics D: Applied Physics
SN - 0022-3727
IS - 24
ER -