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Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy. .

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy. . / Krier, A.; Sherstnev, V. V.; Labadi, Z. et al.
In: Journal of Physics D: Applied Physics, Vol. 33, No. 24, 21.12.2000, p. 3156-3160.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Krier, A, Sherstnev, VV, Labadi, Z, Krier, SE & Gao, HH 2000, 'Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy. .', Journal of Physics D: Applied Physics, vol. 33, no. 24, pp. 3156-3160. https://doi.org/10.1088/0022-3727/33/24/305

APA

Krier, A., Sherstnev, V. V., Labadi, Z., Krier, S. E., & Gao, H. H. (2000). Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy. . Journal of Physics D: Applied Physics, 33(24), 3156-3160. https://doi.org/10.1088/0022-3727/33/24/305

Vancouver

Krier A, Sherstnev VV, Labadi Z, Krier SE, Gao HH. Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy. . Journal of Physics D: Applied Physics. 2000 Dec 21;33(24):3156-3160. doi: 10.1088/0022-3727/33/24/305

Author

Krier, A. ; Sherstnev, V. V. ; Labadi, Z. et al. / Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy. . In: Journal of Physics D: Applied Physics. 2000 ; Vol. 33, No. 24. pp. 3156-3160.

Bibtex

@article{05a095824a814bba84e5d9598f9c5aa2,
title = "Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy. .",
abstract = "Electroluminescence has been observed at 3.3 mum from InAs quantum well LEDs grown from the liquid phase for the first time. A special rapid slider liquid phase epitaxial growth technique was used to produce the wells within the active region of an InAsSbP homojunction p-i-n LED. The light emission was attributed to type II recombination between confined electron and hole states at the InAsSbP/ InAs interfaces of the InAs quantum well. Intense electroluminescence emission was observed at low temperatures from a multi-interface LED which contained three InAs quantum wells in the i-region of the LED structure with emission peaking at 3.68 mum at 250 K.",
author = "A. Krier and Sherstnev, {V. V.} and Z. Labadi and Krier, {S. E.} and Gao, {H. H.}",
year = "2000",
month = dec,
day = "21",
doi = "10.1088/0022-3727/33/24/305",
language = "English",
volume = "33",
pages = "3156--3160",
journal = "Journal of Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd",
number = "24",

}

RIS

TY - JOUR

T1 - Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy. .

AU - Krier, A.

AU - Sherstnev, V. V.

AU - Labadi, Z.

AU - Krier, S. E.

AU - Gao, H. H.

PY - 2000/12/21

Y1 - 2000/12/21

N2 - Electroluminescence has been observed at 3.3 mum from InAs quantum well LEDs grown from the liquid phase for the first time. A special rapid slider liquid phase epitaxial growth technique was used to produce the wells within the active region of an InAsSbP homojunction p-i-n LED. The light emission was attributed to type II recombination between confined electron and hole states at the InAsSbP/ InAs interfaces of the InAs quantum well. Intense electroluminescence emission was observed at low temperatures from a multi-interface LED which contained three InAs quantum wells in the i-region of the LED structure with emission peaking at 3.68 mum at 250 K.

AB - Electroluminescence has been observed at 3.3 mum from InAs quantum well LEDs grown from the liquid phase for the first time. A special rapid slider liquid phase epitaxial growth technique was used to produce the wells within the active region of an InAsSbP homojunction p-i-n LED. The light emission was attributed to type II recombination between confined electron and hole states at the InAsSbP/ InAs interfaces of the InAs quantum well. Intense electroluminescence emission was observed at low temperatures from a multi-interface LED which contained three InAs quantum wells in the i-region of the LED structure with emission peaking at 3.68 mum at 250 K.

U2 - 10.1088/0022-3727/33/24/305

DO - 10.1088/0022-3727/33/24/305

M3 - Journal article

VL - 33

SP - 3156

EP - 3160

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

SN - 0022-3727

IS - 24

ER -