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Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice

Research output: Contribution to journalJournal article

Published

  • Qiandong Zhuang
  • J. M. Li
  • H. X. Li
  • Y. P. Zeng
  • L. Pan
  • Y. H. Chen
  • M.Y. Kong
  • L. Y. Lin
Journal publication date1998
JournalApplied Physics Letters
Journal number25
Volume73
Number of pages3
Pages3706-3708
Original languageEnglish

Abstract

Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice