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Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice

Research output: Contribution to journalJournal article

Published
  • Qiandong Zhuang
  • J. M. Li
  • H. X. Li
  • Y. P. Zeng
  • L. Pan
  • Y. H. Chen
  • M.Y. Kong
  • L. Y. Lin
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<mark>Journal publication date</mark>1998
<mark>Journal</mark>Applied Physics Letters
Issue number25
Volume73
Number of pages3
Pages (from-to)3706-3708
<mark>State</mark>Published
<mark>Original language</mark>English

Abstract

Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice