Standard
Harvard
Zhuang, Q, Li, JM, Li, HX, Zeng, YP, Pan, L, Chen, YH, Kong, MY & Lin, LY 1998, '
Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice',
Applied Physics Letters, vol. 73, no. 25, pp. 3706-3708.
https://doi.org/10.1063/1.122870
APA
Zhuang, Q., Li, J. M., Li, H. X., Zeng, Y. P., Pan, L., Chen, Y. H., Kong, M. Y., & Lin, L. Y. (1998).
Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice.
Applied Physics Letters,
73(25), 3706-3708.
https://doi.org/10.1063/1.122870
Vancouver
Author
Bibtex
@article{488eb963652847818a6c077a713653f4,
title = "Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice",
abstract = "Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice ",
author = "Qiandong Zhuang and Li, {J. M.} and Li, {H. X.} and Zeng, {Y. P.} and L. Pan and Chen, {Y. H.} and M.Y. Kong and Lin, {L. Y.}",
year = "1998",
doi = "10.1063/1.122870",
language = "English",
volume = "73",
pages = "3706--3708",
journal = "Applied Physics Letters",
issn = "1077-3118",
publisher = "American Institute of Physics Inc.",
number = "25",
}
RIS
TY - JOUR
T1 - Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice
AU - Zhuang, Qiandong
AU - Li, J. M.
AU - Li, H. X.
AU - Zeng, Y. P.
AU - Pan, L.
AU - Chen, Y. H.
AU - Kong, M.Y.
AU - Lin, L. Y.
PY - 1998
Y1 - 1998
N2 - Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice
AB - Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice
U2 - 10.1063/1.122870
DO - 10.1063/1.122870
M3 - Journal article
VL - 73
SP - 3706
EP - 3708
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 1077-3118
IS - 25
ER -