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Magneto-photoluminescence studies of the influence of substrate orientation on the growth of InAs/GaAs quantum dots

Research output: Contribution to journalJournal article


  • Jochen Maes
  • Mohamed Henini
  • M Hayne
  • Amalia Patane
  • Fabio Pulizzi
  • Laurence Eaves
  • Peter C Main
  • Victor V Moshchalkov
Journal publication date04/2003
JournalJournal of Crystal Growth
Number of pages6
Original languageEnglish


We have investigated the formation of InAs quantum dots grown by molecular beam epitaxy on GaAs substrates with different orientations using photoluminescence spectroscopy in pulsed magnetic fields (< 50 T). On increasing the amount of InAs deposited on (1 0 0)-oriented GaAs to 1.6 monolayer (ML), an abrupt change from one-dimensional to three-dimensional charge confinement is observed. For substrates cleaved along the (3 1 1)B plane, the charge confinement is found to be much weaker and gradually increases with the amount of InAs. At the highest coverage studied (1.9 ML), the quantum-dot confinement is equally effective for both substrate orientations.