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Magneto-photoluminescence studies of the influence of substrate orientation on the growth of InAs/GaAs quantum dots

Research output: Contribution to journalJournal article

Published

  • Jochen Maes
  • Mohamed Henini
  • M Hayne
  • Amalia Patane
  • Fabio Pulizzi
  • Laurence Eaves
  • Peter C Main
  • Victor V Moshchalkov
<mark>Journal publication date</mark>04/2003
<mark>Journal</mark>Journal of Crystal Growth
Issue1-4
Volume251
Number of pages6
Pages186-191
<mark>Original language</mark>English

Abstract

We have investigated the formation of InAs quantum dots grown by molecular beam epitaxy on GaAs substrates with different orientations using photoluminescence spectroscopy in pulsed magnetic fields (< 50 T). On increasing the amount of InAs deposited on (1 0 0)-oriented GaAs to 1.6 monolayer (ML), an abrupt change from one-dimensional to three-dimensional charge confinement is observed. For substrates cleaved along the (3 1 1)B plane, the charge confinement is found to be much weaker and gradually increases with the amount of InAs. At the highest coverage studied (1.9 ML), the quantum-dot confinement is equally effective for both substrate orientations.