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Magneto-photoluminescence studies of the influence of substrate orientation on the growth of InAs/GaAs quantum dots

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Magneto-photoluminescence studies of the influence of substrate orientation on the growth of InAs/GaAs quantum dots. / Maes, Jochen; Henini, Mohamed; Hayne, M et al.
In: Journal of Crystal Growth, Vol. 251, No. 1-4, 04.2003, p. 186-191.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Maes, J, Henini, M, Hayne, M, Patane, A, Pulizzi, F, Eaves, L, Main, PC & Moshchalkov, VV 2003, 'Magneto-photoluminescence studies of the influence of substrate orientation on the growth of InAs/GaAs quantum dots', Journal of Crystal Growth, vol. 251, no. 1-4, pp. 186-191. https://doi.org/10.1016/S0022-0248(02)02382-5

APA

Maes, J., Henini, M., Hayne, M., Patane, A., Pulizzi, F., Eaves, L., Main, P. C., & Moshchalkov, V. V. (2003). Magneto-photoluminescence studies of the influence of substrate orientation on the growth of InAs/GaAs quantum dots. Journal of Crystal Growth, 251(1-4), 186-191. https://doi.org/10.1016/S0022-0248(02)02382-5

Vancouver

Maes J, Henini M, Hayne M, Patane A, Pulizzi F, Eaves L et al. Magneto-photoluminescence studies of the influence of substrate orientation on the growth of InAs/GaAs quantum dots. Journal of Crystal Growth. 2003 Apr;251(1-4):186-191. doi: 10.1016/S0022-0248(02)02382-5

Author

Maes, Jochen ; Henini, Mohamed ; Hayne, M et al. / Magneto-photoluminescence studies of the influence of substrate orientation on the growth of InAs/GaAs quantum dots. In: Journal of Crystal Growth. 2003 ; Vol. 251, No. 1-4. pp. 186-191.

Bibtex

@article{0ed73ebecfb2467ab65f39f2dd6a4671,
title = "Magneto-photoluminescence studies of the influence of substrate orientation on the growth of InAs/GaAs quantum dots",
abstract = "We have investigated the formation of InAs quantum dots grown by molecular beam epitaxy on GaAs substrates with different orientations using photoluminescence spectroscopy in pulsed magnetic fields (< 50 T). On increasing the amount of InAs deposited on (1 0 0)-oriented GaAs to 1.6 monolayer (ML), an abrupt change from one-dimensional to three-dimensional charge confinement is observed. For substrates cleaved along the (3 1 1)B plane, the charge confinement is found to be much weaker and gradually increases with the amount of InAs. At the highest coverage studied (1.9 ML), the quantum-dot confinement is equally effective for both substrate orientations. ",
keywords = "magnetic fields, nanostructures, photoluminescence, molecular beam epitaxy, quantum dots, semiconducting III-V materials, HETEROSTRUCTURES, RECONSTRUCTION, SURFACE",
author = "Jochen Maes and Mohamed Henini and M Hayne and Amalia Patane and Fabio Pulizzi and Laurence Eaves and Main, {Peter C} and Moshchalkov, {Victor V}",
year = "2003",
month = apr,
doi = "10.1016/S0022-0248(02)02382-5",
language = "English",
volume = "251",
pages = "186--191",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-4",

}

RIS

TY - JOUR

T1 - Magneto-photoluminescence studies of the influence of substrate orientation on the growth of InAs/GaAs quantum dots

AU - Maes, Jochen

AU - Henini, Mohamed

AU - Hayne, M

AU - Patane, Amalia

AU - Pulizzi, Fabio

AU - Eaves, Laurence

AU - Main, Peter C

AU - Moshchalkov, Victor V

PY - 2003/4

Y1 - 2003/4

N2 - We have investigated the formation of InAs quantum dots grown by molecular beam epitaxy on GaAs substrates with different orientations using photoluminescence spectroscopy in pulsed magnetic fields (< 50 T). On increasing the amount of InAs deposited on (1 0 0)-oriented GaAs to 1.6 monolayer (ML), an abrupt change from one-dimensional to three-dimensional charge confinement is observed. For substrates cleaved along the (3 1 1)B plane, the charge confinement is found to be much weaker and gradually increases with the amount of InAs. At the highest coverage studied (1.9 ML), the quantum-dot confinement is equally effective for both substrate orientations. 

AB - We have investigated the formation of InAs quantum dots grown by molecular beam epitaxy on GaAs substrates with different orientations using photoluminescence spectroscopy in pulsed magnetic fields (< 50 T). On increasing the amount of InAs deposited on (1 0 0)-oriented GaAs to 1.6 monolayer (ML), an abrupt change from one-dimensional to three-dimensional charge confinement is observed. For substrates cleaved along the (3 1 1)B plane, the charge confinement is found to be much weaker and gradually increases with the amount of InAs. At the highest coverage studied (1.9 ML), the quantum-dot confinement is equally effective for both substrate orientations. 

KW - magnetic fields

KW - nanostructures

KW - photoluminescence

KW - molecular beam epitaxy

KW - quantum dots

KW - semiconducting III-V materials

KW - HETEROSTRUCTURES

KW - RECONSTRUCTION

KW - SURFACE

U2 - 10.1016/S0022-0248(02)02382-5

DO - 10.1016/S0022-0248(02)02382-5

M3 - Journal article

VL - 251

SP - 186

EP - 191

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4

ER -