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Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K.
Research output: Contribution to journal › Journal article
Published
| Journal publication date | 5/03/2009 |
|---|---|
| Journal | Applied Physics Letters |
| Journal number | 9 |
| Volume | 94 |
| Pages | 091111 |
| Original language | English |
Abstract
Electroluminescence from GaInSb/AlGaInSb type I quantum well diode lasers, grown on GaAs, has been investigated as a function of strain in the quantum wells. Lasing was observed, in pulsed operation, up to temperatures of 161, 208, 219, and 202 K for structures containing 0.55%, 0.62%, 0.78%, and 1.1% strain, respectively, with lasing occurring at similar to 3.3 mu m at 200 K for the 1.1% structure. ©2009 American Institute of Physics
Bibliographic note
Article number: 091111