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Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K.

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<mark>Journal publication date</mark>5/03/2009
<mark>Journal</mark>Applied Physics Letters
Issue number9
Volume94
Pages (from-to)091111
<mark>State</mark>Published
<mark>Original language</mark>English

Abstract

Electroluminescence from GaInSb/AlGaInSb type I quantum well diode lasers, grown on GaAs, has been investigated as a function of strain in the quantum wells. Lasing was observed, in pulsed operation, up to temperatures of 161, 208, 219, and 202 K for structures containing 0.55%, 0.62%, 0.78%, and 1.1% strain, respectively, with lasing occurring at similar to 3.3 mu m at 200 K for the 1.1% structure. ©2009 American Institute of Physics

Bibliographic note

Article number: 091111