Home > Research > Publications & Outputs > Midinfrared GaInSb/AlGaInSb quantum well laser ...

Research

Associated organisational units

Links

Text available via DOI:

View graph of relations

Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Published

Standard

Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K. / Nash, G. R.; Przeslak, S. J. B.; Smith, S. J. et al.
In: Applied Physics Letters, Vol. 94, No. 9, 05.03.2009, p. 091111.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Nash, GR, Przeslak, SJB, Smith, SJ, de Valicourt, G, Andreev, AD, Carrington, PJ, Yin, M, Krier, A, Coomber, SD, Buckle, L, Emeny, MT & Ashley, T 2009, 'Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K.', Applied Physics Letters, vol. 94, no. 9, pp. 091111. https://doi.org/10.1063/1.3094879

APA

Nash, G. R., Przeslak, S. J. B., Smith, S. J., de Valicourt, G., Andreev, A. D., Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T., & Ashley, T. (2009). Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K. Applied Physics Letters, 94(9), 091111. https://doi.org/10.1063/1.3094879

Vancouver

Nash GR, Przeslak SJB, Smith SJ, de Valicourt G, Andreev AD, Carrington PJ et al. Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K. Applied Physics Letters. 2009 Mar 5;94(9):091111. doi: 10.1063/1.3094879

Author

Nash, G. R. ; Przeslak, S. J. B. ; Smith, S. J. et al. / Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K. In: Applied Physics Letters. 2009 ; Vol. 94, No. 9. pp. 091111.

Bibtex

@article{3343240606ee47dea17260647bc5f20e,
title = "Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K.",
abstract = "Electroluminescence from GaInSb/AlGaInSb type I quantum well diode lasers, grown on GaAs, has been investigated as a function of strain in the quantum wells. Lasing was observed, in pulsed operation, up to temperatures of 161, 208, 219, and 202 K for structures containing 0.55%, 0.62%, 0.78%, and 1.1% strain, respectively, with lasing occurring at similar to 3.3 mu m at 200 K for the 1.1% structure. {\textcopyright}2009 American Institute of Physics",
author = "Nash, {G. R.} and Przeslak, {S. J. B.} and Smith, {S. J.} and {de Valicourt}, G. and Andreev, {A. D.} and Carrington, {P. J.} and M. Yin and A. Krier and Coomber, {S. D.} and L. Buckle and Emeny, {M. T.} and T. Ashley",
note = "Article number: 091111",
year = "2009",
month = mar,
day = "5",
doi = "10.1063/1.3094879",
language = "English",
volume = "94",
pages = "091111",
journal = "Applied Physics Letters",
issn = "1077-3118",
publisher = "American Institute of Physics Inc.",
number = "9",

}

RIS

TY - JOUR

T1 - Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K.

AU - Nash, G. R.

AU - Przeslak, S. J. B.

AU - Smith, S. J.

AU - de Valicourt, G.

AU - Andreev, A. D.

AU - Carrington, P. J.

AU - Yin, M.

AU - Krier, A.

AU - Coomber, S. D.

AU - Buckle, L.

AU - Emeny, M. T.

AU - Ashley, T.

N1 - Article number: 091111

PY - 2009/3/5

Y1 - 2009/3/5

N2 - Electroluminescence from GaInSb/AlGaInSb type I quantum well diode lasers, grown on GaAs, has been investigated as a function of strain in the quantum wells. Lasing was observed, in pulsed operation, up to temperatures of 161, 208, 219, and 202 K for structures containing 0.55%, 0.62%, 0.78%, and 1.1% strain, respectively, with lasing occurring at similar to 3.3 mu m at 200 K for the 1.1% structure. ©2009 American Institute of Physics

AB - Electroluminescence from GaInSb/AlGaInSb type I quantum well diode lasers, grown on GaAs, has been investigated as a function of strain in the quantum wells. Lasing was observed, in pulsed operation, up to temperatures of 161, 208, 219, and 202 K for structures containing 0.55%, 0.62%, 0.78%, and 1.1% strain, respectively, with lasing occurring at similar to 3.3 mu m at 200 K for the 1.1% structure. ©2009 American Institute of Physics

UR - http://www.scopus.com/inward/record.url?scp=62149101834&partnerID=8YFLogxK

U2 - 10.1063/1.3094879

DO - 10.1063/1.3094879

M3 - Journal article

VL - 94

SP - 091111

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 1077-3118

IS - 9

ER -