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Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes

Research output: Contribution to journalJournal article


Article number145012
<mark>Journal publication date</mark>2011
<mark>Journal</mark>Advances in OptoElectronics
Issue numbern/a
Number of pages8
<mark>Original language</mark>English


Electroluminescence is reported from dilute nitride InAsSbN/InAs multiquantum well light-emitting diodes grown using nitrogen plasma source molecular beam epitaxy. The diodes exhibited bright emission in the midinfrared peaking at 3.56 μm at room temperature. Emission occurred from a type I transition from electrons in the InAsSbN to confined heavy and light hole states in the QW. Analysis of the temperature- and current-dependent electroluminescence shows that thermally activated hole leakage and Auger recombination are the performance limiting factors in these devices.