Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes
AU - Carrington, Peter
AU - de la Mare, M.
AU - Cheetham, K. J.
AU - Zhuang, Qiandong
AU - Krier, Anthony
PY - 2011
Y1 - 2011
N2 - Electroluminescence is reported from dilute nitride InAsSbN/InAs multiquantum well light-emitting diodes grown using nitrogen plasma source molecular beam epitaxy. The diodes exhibited bright emission in the midinfrared peaking at 3.56 μm at room temperature. Emission occurred from a type I transition from electrons in the InAsSbN to confined heavy and light hole states in the QW. Analysis of the temperature- and current-dependent electroluminescence shows that thermally activated hole leakage and Auger recombination are the performance limiting factors in these devices.
AB - Electroluminescence is reported from dilute nitride InAsSbN/InAs multiquantum well light-emitting diodes grown using nitrogen plasma source molecular beam epitaxy. The diodes exhibited bright emission in the midinfrared peaking at 3.56 μm at room temperature. Emission occurred from a type I transition from electrons in the InAsSbN to confined heavy and light hole states in the QW. Analysis of the temperature- and current-dependent electroluminescence shows that thermally activated hole leakage and Auger recombination are the performance limiting factors in these devices.
U2 - 10.1155/2011/145012
DO - 10.1155/2011/145012
M3 - Journal article
VL - 2011
JO - Advances in OptoElectronics
JF - Advances in OptoElectronics
SN - 1687-563X
IS - n/a
M1 - 145012
ER -