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Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes

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Published

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Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes. / Carrington, Peter; de la Mare, M.; Cheetham, K. J. et al.
In: Advances in OptoElectronics, Vol. 2011, No. n/a, 145012, 2011.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Carrington, P, de la Mare, M, Cheetham, KJ, Zhuang, Q & Krier, A 2011, 'Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes', Advances in OptoElectronics, vol. 2011, no. n/a, 145012. https://doi.org/10.1155/2011/145012

APA

Carrington, P., de la Mare, M., Cheetham, K. J., Zhuang, Q., & Krier, A. (2011). Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes. Advances in OptoElectronics, 2011(n/a), Article 145012. https://doi.org/10.1155/2011/145012

Vancouver

Carrington P, de la Mare M, Cheetham KJ, Zhuang Q, Krier A. Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes. Advances in OptoElectronics. 2011;2011(n/a):145012. doi: 10.1155/2011/145012

Author

Carrington, Peter ; de la Mare, M. ; Cheetham, K. J. et al. / Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes. In: Advances in OptoElectronics. 2011 ; Vol. 2011, No. n/a.

Bibtex

@article{f96b70fa96824abfa3c65808b34f1f63,
title = "Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes",
abstract = "Electroluminescence is reported from dilute nitride InAsSbN/InAs multiquantum well light-emitting diodes grown using nitrogen plasma source molecular beam epitaxy. The diodes exhibited bright emission in the midinfrared peaking at 3.56 μm at room temperature. Emission occurred from a type I transition from electrons in the InAsSbN to confined heavy and light hole states in the QW. Analysis of the temperature- and current-dependent electroluminescence shows that thermally activated hole leakage and Auger recombination are the performance limiting factors in these devices.",
author = "Peter Carrington and {de la Mare}, M. and Cheetham, {K. J.} and Qiandong Zhuang and Anthony Krier",
year = "2011",
doi = "10.1155/2011/145012",
language = "English",
volume = "2011",
journal = "Advances in OptoElectronics",
issn = "1687-563X",
publisher = "Hindawi Publishing Corporation",
number = "n/a",

}

RIS

TY - JOUR

T1 - Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes

AU - Carrington, Peter

AU - de la Mare, M.

AU - Cheetham, K. J.

AU - Zhuang, Qiandong

AU - Krier, Anthony

PY - 2011

Y1 - 2011

N2 - Electroluminescence is reported from dilute nitride InAsSbN/InAs multiquantum well light-emitting diodes grown using nitrogen plasma source molecular beam epitaxy. The diodes exhibited bright emission in the midinfrared peaking at 3.56 μm at room temperature. Emission occurred from a type I transition from electrons in the InAsSbN to confined heavy and light hole states in the QW. Analysis of the temperature- and current-dependent electroluminescence shows that thermally activated hole leakage and Auger recombination are the performance limiting factors in these devices.

AB - Electroluminescence is reported from dilute nitride InAsSbN/InAs multiquantum well light-emitting diodes grown using nitrogen plasma source molecular beam epitaxy. The diodes exhibited bright emission in the midinfrared peaking at 3.56 μm at room temperature. Emission occurred from a type I transition from electrons in the InAsSbN to confined heavy and light hole states in the QW. Analysis of the temperature- and current-dependent electroluminescence shows that thermally activated hole leakage and Auger recombination are the performance limiting factors in these devices.

U2 - 10.1155/2011/145012

DO - 10.1155/2011/145012

M3 - Journal article

VL - 2011

JO - Advances in OptoElectronics

JF - Advances in OptoElectronics

SN - 1687-563X

IS - n/a

M1 - 145012

ER -