12,000

We have over 12,000 students, from over 100 countries, within one of the safest campuses in the UK

93%

93% of Lancaster students go into work or further study within six months of graduating

Home > Research > Publications & Outputs > Modeling of avalanche multiplication and excess...
View graph of relations

« Back

Modeling of avalanche multiplication and excess noise factor in In0.52Al0.48As avalanche photodiodes using a simple Monte Carlo model

Research output: Contribution to journalJournal article

Published

Associated organisational unit

Article number013114
Journal publication date1/07/2008
JournalJournal of Applied Physics
Journal number1
Volume104
Number of pages6
Pages-
Original languageEnglish

Abstract

A simple Monte Carlo model has been developed to simulate the avalanche multiplication process in In0.52Al0.48As. The model reproduces avalanche multiplication and excess noise factor measured on a wide range of In0.52Al0.48As p(+)-n-n(+), n(+)-n-p(+), and p(+)-n(+) diodes and confirms that very low excess noise factor can be obtained using pure electron injection in very thick diodes with avalanche region greater than 2.21 mu m or in very thin diodes with avalanche region lesser than 0.11 mu m. In addition we investigated the effect of an electric field gradient in the avalanche region of avalanche photodiodes and found that the excess noise factor can be reduced with electric field gradients. However in thin diodes with avalanche region lesser than 0.20 mu m, the onset of tunneling current negates the excess noise reduction achieved using the electric field gradient. Therefore ideal p(+)-i-n(+) diodes still provide the overall preferred structure. (c) 2008 American Institute of Physics.