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Molecular beam epitaxial growth of InAsN : Sb for midinfrared Optoelectronics

Research output: Contribution to journalJournal article

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Journal publication date22/09/2008
JournalApplied Physics Letters
Journal number12
Volume93
Number of pages0
Pages121903
Original languageEnglish

Abstract

We report molecular beam epitaxial growth and characterization of dilute nitride InAsN:Sb. X-ray diffraction, energy dispersive x-ray spectrometry, and electron probe microanalysis revealed that nitrogen incorporation is significantly enhanced by introduction of Sb flux during growth, together with a dramatic improvement of the photoluminescence. These observations were attributed to the surfactant effect of Sb which suppresses the surface diffusion length of nitrogen and improves the homogeneity of the alloy. Sb incorporation is enhanced with the presence of nitrogen which was associated with the surface kinetic of growth. InAsN: Sb/InAs p-i-n light emitting diodes operating near 4.0 mu m were also realized. (C) 2008 American Institute of Physics.

Bibliographic note

Article number: 121903