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Molecular beam epitaxial growth of InAsN : Sb for midinfrared Optoelectronics

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Molecular beam epitaxial growth of InAsN : Sb for midinfrared Optoelectronics. / Zhuang, Q.; Godenir, A.; Krier, A.; Tsai, G.; Lin, H. H.

In: Applied Physics Letters, Vol. 93, No. 12, 22.09.2008, p. 121903.

Research output: Contribution to journalJournal articlepeer-review

Harvard

Zhuang, Q, Godenir, A, Krier, A, Tsai, G & Lin, HH 2008, 'Molecular beam epitaxial growth of InAsN : Sb for midinfrared Optoelectronics', Applied Physics Letters, vol. 93, no. 12, pp. 121903. https://doi.org/10.1063/1.2988281

APA

Zhuang, Q., Godenir, A., Krier, A., Tsai, G., & Lin, H. H. (2008). Molecular beam epitaxial growth of InAsN : Sb for midinfrared Optoelectronics. Applied Physics Letters, 93(12), 121903. https://doi.org/10.1063/1.2988281

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Author

Zhuang, Q. ; Godenir, A. ; Krier, A. ; Tsai, G. ; Lin, H. H. / Molecular beam epitaxial growth of InAsN : Sb for midinfrared Optoelectronics. In: Applied Physics Letters. 2008 ; Vol. 93, No. 12. pp. 121903.

Bibtex

@article{0c806d1e005e40d3be187b55d7c7f61d,
title = "Molecular beam epitaxial growth of InAsN : Sb for midinfrared Optoelectronics",
abstract = "We report molecular beam epitaxial growth and characterization of dilute nitride InAsN:Sb. X-ray diffraction, energy dispersive x-ray spectrometry, and electron probe microanalysis revealed that nitrogen incorporation is significantly enhanced by introduction of Sb flux during growth, together with a dramatic improvement of the photoluminescence. These observations were attributed to the surfactant effect of Sb which suppresses the surface diffusion length of nitrogen and improves the homogeneity of the alloy. Sb incorporation is enhanced with the presence of nitrogen which was associated with the surface kinetic of growth. InAsN: Sb/InAs p-i-n light emitting diodes operating near 4.0 mu m were also realized. (C) 2008 American Institute of Physics.",
author = "Q. Zhuang and A. Godenir and A. Krier and G. Tsai and Lin, {H. H.}",
note = "Article number: 121903",
year = "2008",
month = sep,
day = "22",
doi = "10.1063/1.2988281",
language = "English",
volume = "93",
pages = "121903",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "12",

}

RIS

TY - JOUR

T1 - Molecular beam epitaxial growth of InAsN : Sb for midinfrared Optoelectronics

AU - Zhuang, Q.

AU - Godenir, A.

AU - Krier, A.

AU - Tsai, G.

AU - Lin, H. H.

N1 - Article number: 121903

PY - 2008/9/22

Y1 - 2008/9/22

N2 - We report molecular beam epitaxial growth and characterization of dilute nitride InAsN:Sb. X-ray diffraction, energy dispersive x-ray spectrometry, and electron probe microanalysis revealed that nitrogen incorporation is significantly enhanced by introduction of Sb flux during growth, together with a dramatic improvement of the photoluminescence. These observations were attributed to the surfactant effect of Sb which suppresses the surface diffusion length of nitrogen and improves the homogeneity of the alloy. Sb incorporation is enhanced with the presence of nitrogen which was associated with the surface kinetic of growth. InAsN: Sb/InAs p-i-n light emitting diodes operating near 4.0 mu m were also realized. (C) 2008 American Institute of Physics.

AB - We report molecular beam epitaxial growth and characterization of dilute nitride InAsN:Sb. X-ray diffraction, energy dispersive x-ray spectrometry, and electron probe microanalysis revealed that nitrogen incorporation is significantly enhanced by introduction of Sb flux during growth, together with a dramatic improvement of the photoluminescence. These observations were attributed to the surfactant effect of Sb which suppresses the surface diffusion length of nitrogen and improves the homogeneity of the alloy. Sb incorporation is enhanced with the presence of nitrogen which was associated with the surface kinetic of growth. InAsN: Sb/InAs p-i-n light emitting diodes operating near 4.0 mu m were also realized. (C) 2008 American Institute of Physics.

U2 - 10.1063/1.2988281

DO - 10.1063/1.2988281

M3 - Journal article

VL - 93

SP - 121903

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 12

ER -