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    Rights statement: Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 107 (23), 2015 and may be found at http://scitation.aip.org/content/aip/journal/apl/107/23/10.1063/1.4936932

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Multifunctional semiconductor micro-Hall devices for magnetic, electric, and photo-detection

Research output: Contribution to journalJournal article

E-pub ahead of print
  • A. M. Gilbertson
  • Hatef Sadeghi
  • V. Panchal
  • O. Kazakova
  • C. J. Lambert
  • S. A. Solin
  • L. F. Cohen
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Article number233504
<mark>Journal publication date</mark>9/12/2015
<mark>Journal</mark>Applied Physics Letters
Issue number23
Volume107
Number of pages6
Publication statusE-pub ahead of print
Early online date9/12/15
Original languageEnglish

Abstract

We report the real-space voltage response of InSb/AlInSb micro-Hall devices to local photo-excitation, electric, and magnetic fields at room temperature using scanning probe microscopy. We show that the ultrafast generation of localised photocarriers results in conductance perturbations analogous to those produced by local electric fields. Experimental results are in good agreement with tight-binding transport calculations in the diffusive regime. The magnetic, photo, and charge sensitivity of a 2 μm wide probe are evaluated at a 10 μA bias current in the Johnson noise limit (valid at measurement frequencies > 10 kHz) to be, respectively, 500 nT/√Hz; 20 pW/√Hz (λ = 635 nm) comparable to commercial photoconductive detectors; and 0.05 e/√Hz comparable to that of single electron transistors. These results demonstrate the remarkably versatile sensing attributes of simple semiconductor micro-Hall devices that can be applied to a host of imaging and sensing applications.

Bibliographic note

Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 107 (23), 2015 and may be found at http://scitation.aip.org/content/aip/journal/apl/107/23/10.1063/1.4936932