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    Rights statement: Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 107 (23), 2015 and may be found at http://scitation.aip.org/content/aip/journal/apl/107/23/10.1063/1.4936932

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Multifunctional semiconductor micro-Hall devices for magnetic, electric, and photo-detection

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Multifunctional semiconductor micro-Hall devices for magnetic, electric, and photo-detection. / Gilbertson, A. M.; Sadeghi, Hatef; Panchal, V.; Kazakova, O.; Lambert, C. J.; Solin, S. A.; Cohen, L. F.

In: Applied Physics Letters, Vol. 107, No. 23, 233504, 09.12.2015.

Research output: Contribution to journalJournal articlepeer-review

Harvard

Gilbertson, AM, Sadeghi, H, Panchal, V, Kazakova, O, Lambert, CJ, Solin, SA & Cohen, LF 2015, 'Multifunctional semiconductor micro-Hall devices for magnetic, electric, and photo-detection', Applied Physics Letters, vol. 107, no. 23, 233504. https://doi.org/10.1063/1.4936932

APA

Gilbertson, A. M., Sadeghi, H., Panchal, V., Kazakova, O., Lambert, C. J., Solin, S. A., & Cohen, L. F. (2015). Multifunctional semiconductor micro-Hall devices for magnetic, electric, and photo-detection. Applied Physics Letters, 107(23), [233504]. https://doi.org/10.1063/1.4936932

Vancouver

Gilbertson AM, Sadeghi H, Panchal V, Kazakova O, Lambert CJ, Solin SA et al. Multifunctional semiconductor micro-Hall devices for magnetic, electric, and photo-detection. Applied Physics Letters. 2015 Dec 9;107(23). 233504. https://doi.org/10.1063/1.4936932

Author

Gilbertson, A. M. ; Sadeghi, Hatef ; Panchal, V. ; Kazakova, O. ; Lambert, C. J. ; Solin, S. A. ; Cohen, L. F. / Multifunctional semiconductor micro-Hall devices for magnetic, electric, and photo-detection. In: Applied Physics Letters. 2015 ; Vol. 107, No. 23.

Bibtex

@article{65656b824c2e448c861dfeded3eb9861,
title = "Multifunctional semiconductor micro-Hall devices for magnetic, electric, and photo-detection",
abstract = "We report the real-space voltage response of InSb/AlInSb micro-Hall devices to local photo-excitation, electric, and magnetic fields at room temperature using scanning probe microscopy. We show that the ultrafast generation of localised photocarriers results in conductance perturbations analogous to those produced by local electric fields. Experimental results are in good agreement with tight-binding transport calculations in the diffusive regime. The magnetic, photo, and charge sensitivity of a 2 μm wide probe are evaluated at a 10 μA bias current in the Johnson noise limit (valid at measurement frequencies > 10 kHz) to be, respectively, 500 nT/√Hz; 20 pW/√Hz (λ = 635 nm) comparable to commercial photoconductive detectors; and 0.05 e/√Hz comparable to that of single electron transistors. These results demonstrate the remarkably versatile sensing attributes of simple semiconductor micro-Hall devices that can be applied to a host of imaging and sensing applications. ",
author = "Gilbertson, {A. M.} and Hatef Sadeghi and V. Panchal and O. Kazakova and Lambert, {C. J.} and Solin, {S. A.} and Cohen, {L. F.}",
note = "Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 107 (23), 2015 and may be found at http://scitation.aip.org/content/aip/journal/apl/107/23/10.1063/1.4936932",
year = "2015",
month = dec,
day = "9",
doi = "10.1063/1.4936932",
language = "English",
volume = "107",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "23",

}

RIS

TY - JOUR

T1 - Multifunctional semiconductor micro-Hall devices for magnetic, electric, and photo-detection

AU - Gilbertson, A. M.

AU - Sadeghi, Hatef

AU - Panchal, V.

AU - Kazakova, O.

AU - Lambert, C. J.

AU - Solin, S. A.

AU - Cohen, L. F.

N1 - Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 107 (23), 2015 and may be found at http://scitation.aip.org/content/aip/journal/apl/107/23/10.1063/1.4936932

PY - 2015/12/9

Y1 - 2015/12/9

N2 - We report the real-space voltage response of InSb/AlInSb micro-Hall devices to local photo-excitation, electric, and magnetic fields at room temperature using scanning probe microscopy. We show that the ultrafast generation of localised photocarriers results in conductance perturbations analogous to those produced by local electric fields. Experimental results are in good agreement with tight-binding transport calculations in the diffusive regime. The magnetic, photo, and charge sensitivity of a 2 μm wide probe are evaluated at a 10 μA bias current in the Johnson noise limit (valid at measurement frequencies > 10 kHz) to be, respectively, 500 nT/√Hz; 20 pW/√Hz (λ = 635 nm) comparable to commercial photoconductive detectors; and 0.05 e/√Hz comparable to that of single electron transistors. These results demonstrate the remarkably versatile sensing attributes of simple semiconductor micro-Hall devices that can be applied to a host of imaging and sensing applications.

AB - We report the real-space voltage response of InSb/AlInSb micro-Hall devices to local photo-excitation, electric, and magnetic fields at room temperature using scanning probe microscopy. We show that the ultrafast generation of localised photocarriers results in conductance perturbations analogous to those produced by local electric fields. Experimental results are in good agreement with tight-binding transport calculations in the diffusive regime. The magnetic, photo, and charge sensitivity of a 2 μm wide probe are evaluated at a 10 μA bias current in the Johnson noise limit (valid at measurement frequencies > 10 kHz) to be, respectively, 500 nT/√Hz; 20 pW/√Hz (λ = 635 nm) comparable to commercial photoconductive detectors; and 0.05 e/√Hz comparable to that of single electron transistors. These results demonstrate the remarkably versatile sensing attributes of simple semiconductor micro-Hall devices that can be applied to a host of imaging and sensing applications.

U2 - 10.1063/1.4936932

DO - 10.1063/1.4936932

M3 - Journal article

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 23

M1 - 233504

ER -