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N incorporation and photoluminescence in In-rich InGaAsN grown on InAs by liquid phase epitaxy

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N incorporation and photoluminescence in In-rich InGaAsN grown on InAs by liquid phase epitaxy. / de la Mare, M.; Das, S. C.; Das, T. D. et al.
In: Journal of Physics D: Applied Physics, Vol. 44, No. 31, 315102, 10.08.2011, p. -.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

de la Mare, M, Das, SC, Das, TD, Dhar, S & Krier, A 2011, 'N incorporation and photoluminescence in In-rich InGaAsN grown on InAs by liquid phase epitaxy', Journal of Physics D: Applied Physics, vol. 44, no. 31, 315102, pp. -. https://doi.org/10.1088/0022-3727/44/31/315102

APA

de la Mare, M., Das, S. C., Das, T. D., Dhar, S., & Krier, A. (2011). N incorporation and photoluminescence in In-rich InGaAsN grown on InAs by liquid phase epitaxy. Journal of Physics D: Applied Physics, 44(31), -. Article 315102. https://doi.org/10.1088/0022-3727/44/31/315102

Vancouver

de la Mare M, Das SC, Das TD, Dhar S, Krier A. N incorporation and photoluminescence in In-rich InGaAsN grown on InAs by liquid phase epitaxy. Journal of Physics D: Applied Physics. 2011 Aug 10;44(31):-. 315102. doi: 10.1088/0022-3727/44/31/315102

Author

de la Mare, M. ; Das, S. C. ; Das, T. D. et al. / N incorporation and photoluminescence in In-rich InGaAsN grown on InAs by liquid phase epitaxy. In: Journal of Physics D: Applied Physics. 2011 ; Vol. 44, No. 31. pp. -.

Bibtex

@article{552117abad434d5a840e8a028351bca9,
title = "N incorporation and photoluminescence in In-rich InGaAsN grown on InAs by liquid phase epitaxy",
abstract = "Dilute nitride InGaAsN layers with high In content have been grown on InAs substrates by liquid phase epitaxy using GaN as a precursor for N in the growth solution. Photoluminescence (PL) was obtained in the mid-infrared spectral range at temperatures between 4 and 300 K. Although Ga increases the InAs bandgap, the strong band anti-crossing effect from the N incorporation resulted in an overall bandgap reduction of 11 meV compared with InAs. The temperature-dependent PL exhibited a complicated behaviour and showed an anomalous increase in intensity from 190K to room temperature. This was due to the formation in a complex defect which behaves as a non-radiative recombination centre and prevents radiative band-band recombination at temperatures <190 K. Above this temperature the PL increases as band-band transitions become allowed. The formation of this defect requires the presence of both Ga and N and becomes de-activated after a high-temperature anneal. Raman spectroscopy confirmed the presence of phonon modes associated with In-N and Ga-N bonds confirming the incorporation of N using liquid phase growth.",
author = "{de la Mare}, M. and Das, {S. C.} and Das, {T. D.} and S. Dhar and A. Krier",
year = "2011",
month = aug,
day = "10",
doi = "10.1088/0022-3727/44/31/315102",
language = "English",
volume = "44",
pages = "--",
journal = "Journal of Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd",
number = "31",

}

RIS

TY - JOUR

T1 - N incorporation and photoluminescence in In-rich InGaAsN grown on InAs by liquid phase epitaxy

AU - de la Mare, M.

AU - Das, S. C.

AU - Das, T. D.

AU - Dhar, S.

AU - Krier, A.

PY - 2011/8/10

Y1 - 2011/8/10

N2 - Dilute nitride InGaAsN layers with high In content have been grown on InAs substrates by liquid phase epitaxy using GaN as a precursor for N in the growth solution. Photoluminescence (PL) was obtained in the mid-infrared spectral range at temperatures between 4 and 300 K. Although Ga increases the InAs bandgap, the strong band anti-crossing effect from the N incorporation resulted in an overall bandgap reduction of 11 meV compared with InAs. The temperature-dependent PL exhibited a complicated behaviour and showed an anomalous increase in intensity from 190K to room temperature. This was due to the formation in a complex defect which behaves as a non-radiative recombination centre and prevents radiative band-band recombination at temperatures <190 K. Above this temperature the PL increases as band-band transitions become allowed. The formation of this defect requires the presence of both Ga and N and becomes de-activated after a high-temperature anneal. Raman spectroscopy confirmed the presence of phonon modes associated with In-N and Ga-N bonds confirming the incorporation of N using liquid phase growth.

AB - Dilute nitride InGaAsN layers with high In content have been grown on InAs substrates by liquid phase epitaxy using GaN as a precursor for N in the growth solution. Photoluminescence (PL) was obtained in the mid-infrared spectral range at temperatures between 4 and 300 K. Although Ga increases the InAs bandgap, the strong band anti-crossing effect from the N incorporation resulted in an overall bandgap reduction of 11 meV compared with InAs. The temperature-dependent PL exhibited a complicated behaviour and showed an anomalous increase in intensity from 190K to room temperature. This was due to the formation in a complex defect which behaves as a non-radiative recombination centre and prevents radiative band-band recombination at temperatures <190 K. Above this temperature the PL increases as band-band transitions become allowed. The formation of this defect requires the presence of both Ga and N and becomes de-activated after a high-temperature anneal. Raman spectroscopy confirmed the presence of phonon modes associated with In-N and Ga-N bonds confirming the incorporation of N using liquid phase growth.

U2 - 10.1088/0022-3727/44/31/315102

DO - 10.1088/0022-3727/44/31/315102

M3 - Journal article

VL - 44

SP - -

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

SN - 0022-3727

IS - 31

M1 - 315102

ER -