Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - N incorporation and photoluminescence in In-rich InGaAsN grown on InAs by liquid phase epitaxy
AU - de la Mare, M.
AU - Das, S. C.
AU - Das, T. D.
AU - Dhar, S.
AU - Krier, A.
PY - 2011/8/10
Y1 - 2011/8/10
N2 - Dilute nitride InGaAsN layers with high In content have been grown on InAs substrates by liquid phase epitaxy using GaN as a precursor for N in the growth solution. Photoluminescence (PL) was obtained in the mid-infrared spectral range at temperatures between 4 and 300 K. Although Ga increases the InAs bandgap, the strong band anti-crossing effect from the N incorporation resulted in an overall bandgap reduction of 11 meV compared with InAs. The temperature-dependent PL exhibited a complicated behaviour and showed an anomalous increase in intensity from 190K to room temperature. This was due to the formation in a complex defect which behaves as a non-radiative recombination centre and prevents radiative band-band recombination at temperatures <190 K. Above this temperature the PL increases as band-band transitions become allowed. The formation of this defect requires the presence of both Ga and N and becomes de-activated after a high-temperature anneal. Raman spectroscopy confirmed the presence of phonon modes associated with In-N and Ga-N bonds confirming the incorporation of N using liquid phase growth.
AB - Dilute nitride InGaAsN layers with high In content have been grown on InAs substrates by liquid phase epitaxy using GaN as a precursor for N in the growth solution. Photoluminescence (PL) was obtained in the mid-infrared spectral range at temperatures between 4 and 300 K. Although Ga increases the InAs bandgap, the strong band anti-crossing effect from the N incorporation resulted in an overall bandgap reduction of 11 meV compared with InAs. The temperature-dependent PL exhibited a complicated behaviour and showed an anomalous increase in intensity from 190K to room temperature. This was due to the formation in a complex defect which behaves as a non-radiative recombination centre and prevents radiative band-band recombination at temperatures <190 K. Above this temperature the PL increases as band-band transitions become allowed. The formation of this defect requires the presence of both Ga and N and becomes de-activated after a high-temperature anneal. Raman spectroscopy confirmed the presence of phonon modes associated with In-N and Ga-N bonds confirming the incorporation of N using liquid phase growth.
U2 - 10.1088/0022-3727/44/31/315102
DO - 10.1088/0022-3727/44/31/315102
M3 - Journal article
VL - 44
SP - -
JO - Journal of Physics D: Applied Physics
JF - Journal of Physics D: Applied Physics
SN - 0022-3727
IS - 31
M1 - 315102
ER -