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Nanoscale Distortions of Si Quantum Wells in Si/SiGe Quantum-Electronic Heterostructures

Research output: Contribution to journalJournal article


  • P. G. Evans
  • D. E. Savage
  • J. R. Prance
  • C. B. Simmons
  • M. G. Lagally
  • S. N. Coppersmith
  • M. A. Eriksson
  • T. U. Schuelli
<mark>Journal publication date</mark>2/10/2012
<mark>Journal</mark>Advanced Materials
Issue number38
Number of pages5
Pages (from-to)5217-5221
<mark>Original language</mark>English


Si quantum wells on plastically relaxed SiGe substrates have nanometer variations in crystallographic parameters crucial to quantum-information devices. Synchrotron X-ray nanodiffraction shows that the lattice of the Si quantum well varies in orientation and thickness over lateral distances of 100 nm to 1 μm. The result is that the energy levels of the confined states are shifted by energies similar to the electron temperature.