Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Nanoscale Distortions of Si Quantum Wells in Si/SiGe Quantum-Electronic Heterostructures
AU - Evans, P. G.
AU - Savage, D. E.
AU - Prance, J. R.
AU - Simmons, C. B.
AU - Lagally, M. G.
AU - Coppersmith, S. N.
AU - Eriksson, M. A.
AU - Schuelli, T. U.
PY - 2012/10/2
Y1 - 2012/10/2
N2 - Si quantum wells on plastically relaxed SiGe substrates have nanometer variations in crystallographic parameters crucial to quantum-information devices. Synchrotron X-ray nanodiffraction shows that the lattice of the Si quantum well varies in orientation and thickness over lateral distances of 100 nm to 1 μm. The result is that the energy levels of the confined states are shifted by energies similar to the electron temperature.
AB - Si quantum wells on plastically relaxed SiGe substrates have nanometer variations in crystallographic parameters crucial to quantum-information devices. Synchrotron X-ray nanodiffraction shows that the lattice of the Si quantum well varies in orientation and thickness over lateral distances of 100 nm to 1 μm. The result is that the energy levels of the confined states are shifted by energies similar to the electron temperature.
KW - Si/SiGe strained quantum wells
KW - synchrotron X-ray nanodiffraction
KW - structural distortions
KW - thickness and strain variations
U2 - 10.1002/adma.201201833
DO - 10.1002/adma.201201833
M3 - Journal article
VL - 24
SP - 5217
EP - 5221
JO - Advanced Materials
JF - Advanced Materials
SN - 0935-9648
IS - 38
ER -