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Nanoscale Distortions of Si Quantum Wells in Si/SiGe Quantum-Electronic Heterostructures

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Nanoscale Distortions of Si Quantum Wells in Si/SiGe Quantum-Electronic Heterostructures. / Evans, P. G.; Savage, D. E.; Prance, J. R. et al.
In: Advanced Materials, Vol. 24, No. 38, 02.10.2012, p. 5217-5221.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Evans, PG, Savage, DE, Prance, JR, Simmons, CB, Lagally, MG, Coppersmith, SN, Eriksson, MA & Schuelli, TU 2012, 'Nanoscale Distortions of Si Quantum Wells in Si/SiGe Quantum-Electronic Heterostructures', Advanced Materials, vol. 24, no. 38, pp. 5217-5221. https://doi.org/10.1002/adma.201201833

APA

Evans, P. G., Savage, D. E., Prance, J. R., Simmons, C. B., Lagally, M. G., Coppersmith, S. N., Eriksson, M. A., & Schuelli, T. U. (2012). Nanoscale Distortions of Si Quantum Wells in Si/SiGe Quantum-Electronic Heterostructures. Advanced Materials, 24(38), 5217-5221. https://doi.org/10.1002/adma.201201833

Vancouver

Evans PG, Savage DE, Prance JR, Simmons CB, Lagally MG, Coppersmith SN et al. Nanoscale Distortions of Si Quantum Wells in Si/SiGe Quantum-Electronic Heterostructures. Advanced Materials. 2012 Oct 2;24(38):5217-5221. doi: 10.1002/adma.201201833

Author

Evans, P. G. ; Savage, D. E. ; Prance, J. R. et al. / Nanoscale Distortions of Si Quantum Wells in Si/SiGe Quantum-Electronic Heterostructures. In: Advanced Materials. 2012 ; Vol. 24, No. 38. pp. 5217-5221.

Bibtex

@article{acf9e7e7b2fa4d9ca8ba32d1970a41ca,
title = "Nanoscale Distortions of Si Quantum Wells in Si/SiGe Quantum-Electronic Heterostructures",
abstract = "Si quantum wells on plastically relaxed SiGe substrates have nanometer variations in crystallographic parameters crucial to quantum-information devices. Synchrotron X-ray nanodiffraction shows that the lattice of the Si quantum well varies in orientation and thickness over lateral distances of 100 nm to 1 μm. The result is that the energy levels of the confined states are shifted by energies similar to the electron temperature.",
keywords = "Si/SiGe strained quantum wells, synchrotron X-ray nanodiffraction , structural distortions , thickness and strain variations",
author = "Evans, {P. G.} and Savage, {D. E.} and Prance, {J. R.} and Simmons, {C. B.} and Lagally, {M. G.} and Coppersmith, {S. N.} and Eriksson, {M. A.} and Schuelli, {T. U.}",
year = "2012",
month = oct,
day = "2",
doi = "10.1002/adma.201201833",
language = "English",
volume = "24",
pages = "5217--5221",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",
number = "38",

}

RIS

TY - JOUR

T1 - Nanoscale Distortions of Si Quantum Wells in Si/SiGe Quantum-Electronic Heterostructures

AU - Evans, P. G.

AU - Savage, D. E.

AU - Prance, J. R.

AU - Simmons, C. B.

AU - Lagally, M. G.

AU - Coppersmith, S. N.

AU - Eriksson, M. A.

AU - Schuelli, T. U.

PY - 2012/10/2

Y1 - 2012/10/2

N2 - Si quantum wells on plastically relaxed SiGe substrates have nanometer variations in crystallographic parameters crucial to quantum-information devices. Synchrotron X-ray nanodiffraction shows that the lattice of the Si quantum well varies in orientation and thickness over lateral distances of 100 nm to 1 μm. The result is that the energy levels of the confined states are shifted by energies similar to the electron temperature.

AB - Si quantum wells on plastically relaxed SiGe substrates have nanometer variations in crystallographic parameters crucial to quantum-information devices. Synchrotron X-ray nanodiffraction shows that the lattice of the Si quantum well varies in orientation and thickness over lateral distances of 100 nm to 1 μm. The result is that the energy levels of the confined states are shifted by energies similar to the electron temperature.

KW - Si/SiGe strained quantum wells

KW - synchrotron X-ray nanodiffraction

KW - structural distortions

KW - thickness and strain variations

U2 - 10.1002/adma.201201833

DO - 10.1002/adma.201201833

M3 - Journal article

VL - 24

SP - 5217

EP - 5221

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 38

ER -