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Nanoscale elastic imaging: a new metrology tool for low-k dielectric integration

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Nanoscale elastic imaging: a new metrology tool for low-k dielectric integration. / Shekhawat, G. S. ; Kolosov, Oleg; Briggs, G. Andrew D. et al.
Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International . New York: IEEE, 2000. p. 96-98.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

Harvard

Shekhawat, GS, Kolosov, O, Briggs, GAD, Shaffer, EO, Martin, SJ & Geer, RE 2000, Nanoscale elastic imaging: a new metrology tool for low-k dielectric integration. in Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International . IEEE, New York, pp. 96-98, 3rd Annual International Interconnect Technology Conference, SAN FRANCISCO, 5/06/00. https://doi.org/10.1109/IITC.2000.854293

APA

Shekhawat, G. S., Kolosov, O., Briggs, G. A. D., Shaffer, E. O., Martin, S. J., & Geer, R. E. (2000). Nanoscale elastic imaging: a new metrology tool for low-k dielectric integration. In Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International (pp. 96-98). IEEE. https://doi.org/10.1109/IITC.2000.854293

Vancouver

Shekhawat GS, Kolosov O, Briggs GAD, Shaffer EO, Martin SJ, Geer RE. Nanoscale elastic imaging: a new metrology tool for low-k dielectric integration. In Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International . New York: IEEE. 2000. p. 96-98 doi: 10.1109/IITC.2000.854293

Author

Shekhawat, G. S. ; Kolosov, Oleg ; Briggs, G. Andrew D. et al. / Nanoscale elastic imaging: a new metrology tool for low-k dielectric integration. Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International . New York : IEEE, 2000. pp. 96-98

Bibtex

@inproceedings{53fc7161a65f417b8334f50613ad9d50,
title = "Nanoscale elastic imaging: a new metrology tool for low-k dielectric integration",
abstract = "A new characterization tool based on ultrasonic force microscopy (UFM) has been developed to image the nanoscale mechanical properties of metal/low-k polymer damascence test structures. Metal and polymer regions are differentiated on the basis of elastic modulus with a spatial resolution less than or equal to 10 nm. This technique reveals a RIE-induced hardening of the low-k polymer at the metal/polymer interface and offers new opportunities for metrological reliability evaluation of low-k integration processes.",
author = "Shekhawat, {G. S.} and Oleg Kolosov and Briggs, {G. Andrew D.} and Shaffer, {E. O.} and Martin, {S. J.} and Geer, {R. E.}",
year = "2000",
doi = "10.1109/IITC.2000.854293",
language = "English",
isbn = "0-7803-6327-2",
pages = "96--98",
booktitle = "Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International",
publisher = "IEEE",
note = "3rd Annual International Interconnect Technology Conference ; Conference date: 05-06-2000 Through 07-06-2000",

}

RIS

TY - GEN

T1 - Nanoscale elastic imaging: a new metrology tool for low-k dielectric integration

AU - Shekhawat, G. S.

AU - Kolosov, Oleg

AU - Briggs, G. Andrew D.

AU - Shaffer, E. O.

AU - Martin, S. J.

AU - Geer, R. E.

PY - 2000

Y1 - 2000

N2 - A new characterization tool based on ultrasonic force microscopy (UFM) has been developed to image the nanoscale mechanical properties of metal/low-k polymer damascence test structures. Metal and polymer regions are differentiated on the basis of elastic modulus with a spatial resolution less than or equal to 10 nm. This technique reveals a RIE-induced hardening of the low-k polymer at the metal/polymer interface and offers new opportunities for metrological reliability evaluation of low-k integration processes.

AB - A new characterization tool based on ultrasonic force microscopy (UFM) has been developed to image the nanoscale mechanical properties of metal/low-k polymer damascence test structures. Metal and polymer regions are differentiated on the basis of elastic modulus with a spatial resolution less than or equal to 10 nm. This technique reveals a RIE-induced hardening of the low-k polymer at the metal/polymer interface and offers new opportunities for metrological reliability evaluation of low-k integration processes.

U2 - 10.1109/IITC.2000.854293

DO - 10.1109/IITC.2000.854293

M3 - Conference contribution/Paper

SN - 0-7803-6327-2

SP - 96

EP - 98

BT - Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International

PB - IEEE

CY - New York

T2 - 3rd Annual International Interconnect Technology Conference

Y2 - 5 June 2000 through 7 June 2000

ER -