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On the resonant tunneling through double-barrier structures in a tilted magnetic field

Research output: Contribution to journalJournal article

Published

<mark>Journal publication date</mark>06/1991
<mark>Journal</mark>Solid State Communications
Issue11
Volume78
Number of pages5
Pages925-929
<mark>Original language</mark>English

Abstract

The influence of a tilted magnetic field on the resonant structure of current-voltage (I-V) characteristics of layered semiconductor systems is analyzed both for the cases of weak and strong magnetic field. The Hall current and a current caused by tunneling assisted shift of cyclotron orbit center are also discussed.