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On the resonant tunneling through double-barrier structures in a tilted magnetic field

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On the resonant tunneling through double-barrier structures in a tilted magnetic field. / Falko, Vladimir.
In: Solid State Communications, Vol. 78, No. 11, 06.1991, p. 925-929.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Falko, V 1991, 'On the resonant tunneling through double-barrier structures in a tilted magnetic field', Solid State Communications, vol. 78, no. 11, pp. 925-929. https://doi.org/10.1016/0038-1098(91)90208-D

APA

Falko, V. (1991). On the resonant tunneling through double-barrier structures in a tilted magnetic field. Solid State Communications, 78(11), 925-929. https://doi.org/10.1016/0038-1098(91)90208-D

Vancouver

Falko V. On the resonant tunneling through double-barrier structures in a tilted magnetic field. Solid State Communications. 1991 Jun;78(11):925-929. doi: 10.1016/0038-1098(91)90208-D

Author

Falko, Vladimir. / On the resonant tunneling through double-barrier structures in a tilted magnetic field. In: Solid State Communications. 1991 ; Vol. 78, No. 11. pp. 925-929.

Bibtex

@article{fa5582f351e24c74859eb5507afd03f4,
title = "On the resonant tunneling through double-barrier structures in a tilted magnetic field",
abstract = "The influence of a tilted magnetic field on the resonant structure of current-voltage (I-V) characteristics of layered semiconductor systems is analyzed both for the cases of weak and strong magnetic field. The Hall current and a current caused by tunneling assisted shift of cyclotron orbit center are also discussed.",
author = "Vladimir Falko",
year = "1991",
month = jun,
doi = "10.1016/0038-1098(91)90208-D",
language = "English",
volume = "78",
pages = "925--929",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier Limited",
number = "11",

}

RIS

TY - JOUR

T1 - On the resonant tunneling through double-barrier structures in a tilted magnetic field

AU - Falko, Vladimir

PY - 1991/6

Y1 - 1991/6

N2 - The influence of a tilted magnetic field on the resonant structure of current-voltage (I-V) characteristics of layered semiconductor systems is analyzed both for the cases of weak and strong magnetic field. The Hall current and a current caused by tunneling assisted shift of cyclotron orbit center are also discussed.

AB - The influence of a tilted magnetic field on the resonant structure of current-voltage (I-V) characteristics of layered semiconductor systems is analyzed both for the cases of weak and strong magnetic field. The Hall current and a current caused by tunneling assisted shift of cyclotron orbit center are also discussed.

U2 - 10.1016/0038-1098(91)90208-D

DO - 10.1016/0038-1098(91)90208-D

M3 - Journal article

VL - 78

SP - 925

EP - 929

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 11

ER -