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  • Open circuit voltage increase of GaSb-GaAs quantum ring solar cells under high hydrostatic pressure

    Rights statement: This is the author’s version of a work that was accepted for publication in Solar Energy Materials and Solar Cells. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Solar Energy Materials and Solar Cells, 187, 2018 DOI: 10.1016/j.solmat.2018.07.028

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Open-circuit voltage increase of GaSb/GaAs quantum ring solar cells under high hydrostatic pressure

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Open-circuit voltage increase of GaSb/GaAs quantum ring solar cells under high hydrostatic pressure. / Montesdeoca Cardenes, Denise; Carrington, Peter James; Marko, I. P.; Wagener, Magnus C. ; Sweeney, S. J.; Krier, Anthony.

In: Solar Energy Materials and Solar Cells, Vol. 187, No. 1, 01.12.2018, p. 227-232.

Research output: Contribution to journalJournal article

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Montesdeoca Cardenes, Denise ; Carrington, Peter James ; Marko, I. P. ; Wagener, Magnus C. ; Sweeney, S. J. ; Krier, Anthony. / Open-circuit voltage increase of GaSb/GaAs quantum ring solar cells under high hydrostatic pressure. In: Solar Energy Materials and Solar Cells. 2018 ; Vol. 187, No. 1. pp. 227-232.

Bibtex

@article{799a517a032643109b42a4de28578ebd,
title = "Open-circuit voltage increase of GaSb/GaAs quantum ring solar cells under high hydrostatic pressure",
abstract = "Hydrostatic pressure can be used as a powerful diagnostic tool to enable the study of lattice dynamics, defects, impurities and recombination processes in a variety of semiconductor materials and devices. Here we report on intermediate band GaAs solar cells containing GaSb quantum rings which exhibit a 15% increase in open-circuit voltage under application of 8 kbar hydrostatic pressure at room temperature. The pressure coefficients of the respective optical transitions for the GaSb quantum rings, the wetting layer and the GaAs bulk, were each measured to be ~10.5±0.5 meV/kbar. A comparison of the pressure induced and temperature induced bandgap changes highlights the significance of the thermal energy of carriers in intermediate band solar cells.",
keywords = "Hydrostatic pressure, Quantum Ring, Intermediate band, Solar cells, Type-II GaSb/GaAs",
author = "{Montesdeoca Cardenes}, Denise and Carrington, {Peter James} and Marko, {I. P.} and Wagener, {Magnus C.} and Sweeney, {S. J.} and Anthony Krier",
note = "This is the author{\textquoteright}s version of a work that was accepted for publication in Solar Energy Materials and Solar Cells. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Solar Energy Materials and Solar Cells, 187, 2018 DOI: 10.1016/j.solmat.2018.07.028",
year = "2018",
month = dec
day = "1",
doi = "10.1016/j.solmat.2018.07.028",
language = "English",
volume = "187",
pages = "227--232",
journal = "Solar Energy Materials and Solar Cells",
issn = "0927-0248",
publisher = "Elsevier",
number = "1",

}

RIS

TY - JOUR

T1 - Open-circuit voltage increase of GaSb/GaAs quantum ring solar cells under high hydrostatic pressure

AU - Montesdeoca Cardenes, Denise

AU - Carrington, Peter James

AU - Marko, I. P.

AU - Wagener, Magnus C.

AU - Sweeney, S. J.

AU - Krier, Anthony

N1 - This is the author’s version of a work that was accepted for publication in Solar Energy Materials and Solar Cells. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Solar Energy Materials and Solar Cells, 187, 2018 DOI: 10.1016/j.solmat.2018.07.028

PY - 2018/12/1

Y1 - 2018/12/1

N2 - Hydrostatic pressure can be used as a powerful diagnostic tool to enable the study of lattice dynamics, defects, impurities and recombination processes in a variety of semiconductor materials and devices. Here we report on intermediate band GaAs solar cells containing GaSb quantum rings which exhibit a 15% increase in open-circuit voltage under application of 8 kbar hydrostatic pressure at room temperature. The pressure coefficients of the respective optical transitions for the GaSb quantum rings, the wetting layer and the GaAs bulk, were each measured to be ~10.5±0.5 meV/kbar. A comparison of the pressure induced and temperature induced bandgap changes highlights the significance of the thermal energy of carriers in intermediate band solar cells.

AB - Hydrostatic pressure can be used as a powerful diagnostic tool to enable the study of lattice dynamics, defects, impurities and recombination processes in a variety of semiconductor materials and devices. Here we report on intermediate band GaAs solar cells containing GaSb quantum rings which exhibit a 15% increase in open-circuit voltage under application of 8 kbar hydrostatic pressure at room temperature. The pressure coefficients of the respective optical transitions for the GaSb quantum rings, the wetting layer and the GaAs bulk, were each measured to be ~10.5±0.5 meV/kbar. A comparison of the pressure induced and temperature induced bandgap changes highlights the significance of the thermal energy of carriers in intermediate band solar cells.

KW - Hydrostatic pressure

KW - Quantum Ring

KW - Intermediate band

KW - Solar cells

KW - Type-II GaSb/GaAs

UR - https://dx.doi.org/10.17635/lancaster/researchdata/214

U2 - 10.1016/j.solmat.2018.07.028

DO - 10.1016/j.solmat.2018.07.028

M3 - Journal article

VL - 187

SP - 227

EP - 232

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

SN - 0927-0248

IS - 1

ER -