Rights statement: This is the author’s version of a work that was accepted for publication in Solar Energy Materials and Solar Cells. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Solar Energy Materials and Solar Cells, 187, 2018 DOI: 10.1016/j.solmat.2018.07.028
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Final published version
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
}
TY - JOUR
T1 - Open-circuit voltage increase of GaSb/GaAs quantum ring solar cells under high hydrostatic pressure
AU - Montesdeoca Cardenes, Denise
AU - Carrington, Peter James
AU - Marko, I. P.
AU - Wagener, Magnus C.
AU - Sweeney, S. J.
AU - Krier, Anthony
N1 - This is the author’s version of a work that was accepted for publication in Solar Energy Materials and Solar Cells. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Solar Energy Materials and Solar Cells, 187, 2018 DOI: 10.1016/j.solmat.2018.07.028
PY - 2018/12/1
Y1 - 2018/12/1
N2 - Hydrostatic pressure can be used as a powerful diagnostic tool to enable the study of lattice dynamics, defects, impurities and recombination processes in a variety of semiconductor materials and devices. Here we report on intermediate band GaAs solar cells containing GaSb quantum rings which exhibit a 15% increase in open-circuit voltage under application of 8 kbar hydrostatic pressure at room temperature. The pressure coefficients of the respective optical transitions for the GaSb quantum rings, the wetting layer and the GaAs bulk, were each measured to be ~10.5±0.5 meV/kbar. A comparison of the pressure induced and temperature induced bandgap changes highlights the significance of the thermal energy of carriers in intermediate band solar cells.
AB - Hydrostatic pressure can be used as a powerful diagnostic tool to enable the study of lattice dynamics, defects, impurities and recombination processes in a variety of semiconductor materials and devices. Here we report on intermediate band GaAs solar cells containing GaSb quantum rings which exhibit a 15% increase in open-circuit voltage under application of 8 kbar hydrostatic pressure at room temperature. The pressure coefficients of the respective optical transitions for the GaSb quantum rings, the wetting layer and the GaAs bulk, were each measured to be ~10.5±0.5 meV/kbar. A comparison of the pressure induced and temperature induced bandgap changes highlights the significance of the thermal energy of carriers in intermediate band solar cells.
KW - Hydrostatic pressure
KW - Quantum Ring
KW - Intermediate band
KW - Solar cells
KW - Type-II GaSb/GaAs
UR - https://dx.doi.org/10.17635/lancaster/researchdata/214
U2 - 10.1016/j.solmat.2018.07.028
DO - 10.1016/j.solmat.2018.07.028
M3 - Journal article
VL - 187
SP - 227
EP - 232
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
SN - 0927-0248
IS - 1
ER -