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Optical detection of charge redistribution in a delta modulation-doped GaAs-AlxGa1-xAs heterojunction

Research output: Contribution to journalJournal article

Published

  • Gregory C Kerridge
  • Michael G Greally
  • M Hayne
  • Alan Usher
  • Annette S Plaut
  • Jose A Brum
  • Martin C Holland
  • Colin R Stanley
Journal publication date1999
JournalSolid State Communications
Journal number4
Volume109
Number of pages5
Pages267-271
Original languageEnglish

Abstract

We have investigated magnetically-induced charge redistribution within a delta modulation-doped GaAs-AlxGa1-xAs heterojunction structure by studying the photoluminescence due to electrons from the two-dimensional(2D) electron system recombining with photoexcited holes. At well defined values of magnetic field, charge transfer occurs between this 2D electron system and the V-shaped potential well formed in the AlxGa1-xAs by Si delta modulation-doping. This redistribution of charge is observed as discontinuities in the photoluminescence energies. From these measurements we have derived the characteristic transfer time for electrons to move between these two wells.