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Properties of dilute InAsN layers grown by liquid phase epitaxy.

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<mark>Journal publication date</mark>22/08/2008
<mark>Journal</mark>Applied Physics Letters
Issue number7
Pages (from-to)071905
Publication statusPublished
Original languageEnglish


We report on the liquid phase epitaxial growth of InAsN from indium rich solution. The spectral properties of dilute bulk alloys containing N similar to 0.5% and which exhibit photoluminescence in the midinfrared spectral range without any postgrowth annealing are described. The blueshift in the emission spectrum is attributed to a combination of tensile strain and band filling effects. (c) 2008 American Institute of Physics.

Bibliographic note

Article number : 071905