Home > Research > Publications & Outputs > Properties of dilute InAsN layers grown by liqu...

Associated organisational unit

Links

Text available via DOI:

View graph of relations

Properties of dilute InAsN layers grown by liquid phase epitaxy.

Research output: Contribution to journalJournal article

Published
Close
<mark>Journal publication date</mark>22/08/2008
<mark>Journal</mark>Applied Physics Letters
Issue number7
Volume93
Pages (from-to)071905
<mark>State</mark>Published
<mark>Original language</mark>English

Abstract

We report on the liquid phase epitaxial growth of InAsN from indium rich solution. The spectral properties of dilute bulk alloys containing N similar to 0.5% and which exhibit photoluminescence in the midinfrared spectral range without any postgrowth annealing are described. The blueshift in the emission spectrum is attributed to a combination of tensile strain and band filling effects. (c) 2008 American Institute of Physics.

Bibliographic note

Article number : 071905