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Properties of dilute InAsN layers grown by liquid phase epitaxy.

Research output: Contribution to journalJournal article

Published

Journal publication date22/08/2008
JournalApplied Physics Letters
Journal number7
Volume93
Pages071905
Original languageEnglish

Abstract

We report on the liquid phase epitaxial growth of InAsN from indium rich solution. The spectral properties of dilute bulk alloys containing N similar to 0.5% and which exhibit photoluminescence in the midinfrared spectral range without any postgrowth annealing are described. The blueshift in the emission spectrum is attributed to a combination of tensile strain and band filling effects. (c) 2008 American Institute of Physics.

Bibliographic note

Article number : 071905