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Properties of dilute InAsN layers grown by liquid phase epitaxy.

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Properties of dilute InAsN layers grown by liquid phase epitaxy. / Dhar, S.; Das, T. D.; de la Mare, M. et al.
In: Applied Physics Letters, Vol. 93, No. 7, 22.08.2008, p. 071905.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Dhar, S, Das, TD, de la Mare, M & Krier, A 2008, 'Properties of dilute InAsN layers grown by liquid phase epitaxy.', Applied Physics Letters, vol. 93, no. 7, pp. 071905. https://doi.org/10.1063/1.2975166

APA

Dhar, S., Das, T. D., de la Mare, M., & Krier, A. (2008). Properties of dilute InAsN layers grown by liquid phase epitaxy. Applied Physics Letters, 93(7), 071905. https://doi.org/10.1063/1.2975166

Vancouver

Dhar S, Das TD, de la Mare M, Krier A. Properties of dilute InAsN layers grown by liquid phase epitaxy. Applied Physics Letters. 2008 Aug 22;93(7):071905. doi: 10.1063/1.2975166

Author

Dhar, S. ; Das, T. D. ; de la Mare, M. et al. / Properties of dilute InAsN layers grown by liquid phase epitaxy. In: Applied Physics Letters. 2008 ; Vol. 93, No. 7. pp. 071905.

Bibtex

@article{6049f12eba3548eb99837175c8ff0ed0,
title = "Properties of dilute InAsN layers grown by liquid phase epitaxy.",
abstract = "We report on the liquid phase epitaxial growth of InAsN from indium rich solution. The spectral properties of dilute bulk alloys containing N similar to 0.5% and which exhibit photoluminescence in the midinfrared spectral range without any postgrowth annealing are described. The blueshift in the emission spectrum is attributed to a combination of tensile strain and band filling effects. (c) 2008 American Institute of Physics.",
author = "S. Dhar and Das, {T. D.} and {de la Mare}, M. and A. Krier",
note = "Article number : 071905",
year = "2008",
month = aug,
day = "22",
doi = "10.1063/1.2975166",
language = "English",
volume = "93",
pages = "071905",
journal = "Applied Physics Letters",
issn = "1077-3118",
publisher = "American Institute of Physics Inc.",
number = "7",

}

RIS

TY - JOUR

T1 - Properties of dilute InAsN layers grown by liquid phase epitaxy.

AU - Dhar, S.

AU - Das, T. D.

AU - de la Mare, M.

AU - Krier, A.

N1 - Article number : 071905

PY - 2008/8/22

Y1 - 2008/8/22

N2 - We report on the liquid phase epitaxial growth of InAsN from indium rich solution. The spectral properties of dilute bulk alloys containing N similar to 0.5% and which exhibit photoluminescence in the midinfrared spectral range without any postgrowth annealing are described. The blueshift in the emission spectrum is attributed to a combination of tensile strain and band filling effects. (c) 2008 American Institute of Physics.

AB - We report on the liquid phase epitaxial growth of InAsN from indium rich solution. The spectral properties of dilute bulk alloys containing N similar to 0.5% and which exhibit photoluminescence in the midinfrared spectral range without any postgrowth annealing are described. The blueshift in the emission spectrum is attributed to a combination of tensile strain and band filling effects. (c) 2008 American Institute of Physics.

UR - http://www.scopus.com/inward/record.url?scp=50249178498&partnerID=8YFLogxK

U2 - 10.1063/1.2975166

DO - 10.1063/1.2975166

M3 - Journal article

VL - 93

SP - 071905

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 1077-3118

IS - 7

ER -