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Quantum resistance metrology using graphene

Research output: Contribution to journalLiterature review

Published
  • T. J. B. M. Janssen
  • A. Tzalenchuk
  • S. Lara-Avila
  • S. Kubatkin
  • Vladimir Falko
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Article number104501
<mark>Journal publication date</mark>3/10/2013
<mark>Journal</mark>Reports on Progress in Physics
Issue number10
Volume76
Number of pages24
Publication StatusPublished
<mark>Original language</mark>English

Abstract

In this paper, we review the recent extraordinary progress in the development of a new quantum standard for resistance based on graphene. We discuss the unique properties of this material system relating to resistance metrology and discuss results of the recent highest-ever precision direct comparison of the Hall resistance between graphene and traditional GaAs. We mainly focus our review on graphene expitaxially grown on SiC, a system which so far resulted in the best results. We also briefly discuss progress in the two other graphene material systems, exfoliated graphene and chemical vapour deposition graphene, and make a critical comparison with SiC graphene. Finally, we discuss other possible applications of graphene in metrology.