Final published version
Research output: Contribution to Journal/Magazine › Literature review › peer-review
Article number | 104501 |
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<mark>Journal publication date</mark> | 3/10/2013 |
<mark>Journal</mark> | Reports on Progress in Physics |
Issue number | 10 |
Volume | 76 |
Number of pages | 24 |
Publication Status | Published |
<mark>Original language</mark> | English |
In this paper, we review the recent extraordinary progress in the development of a new quantum standard for resistance based on graphene. We discuss the unique properties of this material system relating to resistance metrology and discuss results of the recent highest-ever precision direct comparison of the Hall resistance between graphene and traditional GaAs. We mainly focus our review on graphene expitaxially grown on SiC, a system which so far resulted in the best results. We also briefly discuss progress in the two other graphene material systems, exfoliated graphene and chemical vapour deposition graphene, and make a critical comparison with SiC graphene. Finally, we discuss other possible applications of graphene in metrology.