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Raman spectroscopy of pentanary GaInAsSbP narrow gap alloys lattice matched to InAs and GaSb

Research output: Contribution to journalJournal article

Published
Article number015004
<mark>Journal publication date</mark>01/2012
<mark>Journal</mark>Semiconductor Science and Technology
Issue number1
Volume27
Number of pages4
Pages (from-to)-
<mark>State</mark>Published
<mark>Original language</mark>English

Abstract

The Raman spectra of pentanary GaInAsSbP alloys are reported for the first time. Measurements were performed at room temperature on epilayers which were grown using liquid phase epitaxy outside of the miscibility gap and nominally lattice matched to (1 0 0) InAs and GaSb. The dominant phonon peaks in the spectra are identified and attributed to InSb-, InP-, GaAs- and (GaSb+InAs)-like phonons, along with disorder-activated phonons. No GaP-like phonons were observed. Further peaks were also attributed to disorder-activated optical and longitudinal acoustic phonons, associated with alloy disorder effects.