Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Raman spectroscopy of pentanary GaInAsSbP narrow gap alloys lattice matched to InAs and GaSb
AU - Cheetham, K. J.
AU - Carrington, P. J.
AU - Krier, A.
AU - Patel, I. I.
AU - Martin, F. L.
PY - 2012/1
Y1 - 2012/1
N2 - The Raman spectra of pentanary GaInAsSbP alloys are reported for the first time. Measurements were performed at room temperature on epilayers which were grown using liquid phase epitaxy outside of the miscibility gap and nominally lattice matched to (1 0 0) InAs and GaSb. The dominant phonon peaks in the spectra are identified and attributed to InSb-, InP-, GaAs- and (GaSb+InAs)-like phonons, along with disorder-activated phonons. No GaP-like phonons were observed. Further peaks were also attributed to disorder-activated optical and longitudinal acoustic phonons, associated with alloy disorder effects.
AB - The Raman spectra of pentanary GaInAsSbP alloys are reported for the first time. Measurements were performed at room temperature on epilayers which were grown using liquid phase epitaxy outside of the miscibility gap and nominally lattice matched to (1 0 0) InAs and GaSb. The dominant phonon peaks in the spectra are identified and attributed to InSb-, InP-, GaAs- and (GaSb+InAs)-like phonons, along with disorder-activated phonons. No GaP-like phonons were observed. Further peaks were also attributed to disorder-activated optical and longitudinal acoustic phonons, associated with alloy disorder effects.
U2 - 10.1088/0268-1242/27/1/015004
DO - 10.1088/0268-1242/27/1/015004
M3 - Journal article
VL - 27
SP - -
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 1
M1 - 015004
ER -