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Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes.

Research output: Contribution to journalJournal article


<mark>Journal publication date</mark>1/09/2008
<mark>Journal</mark>Applied Physics Letters
Issue number9
Pages (from-to)091101
<mark>Original language</mark>English


Self-assembled InSb submonolayer quantum dots (QDs) in an InAs matrix have been grown by molecular beam epitaxy using Sb-2 and As-2 fluxes. The structures exhibit bright midinfrared photoluminescence up to room temperature. Intense room temperature electroluminescence with a peak at wavelength near 3.8 mu m was observed from p-i-n light emitting diode structures containing ten InSb submonolayer QD sheets inserted within the InAs active region. (c) 2008 American Institute of Physics.