Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes.
AU - Carrington, P. J.
AU - Solov'ev, V. A.
AU - Zhuang, Q.
AU - Krier, A.
AU - Ivanov, S. V.
PY - 2008/9/1
Y1 - 2008/9/1
N2 - Self-assembled InSb submonolayer quantum dots (QDs) in an InAs matrix have been grown by molecular beam epitaxy using Sb-2 and As-2 fluxes. The structures exhibit bright midinfrared photoluminescence up to room temperature. Intense room temperature electroluminescence with a peak at wavelength near 3.8 mu m was observed from p-i-n light emitting diode structures containing ten InSb submonolayer QD sheets inserted within the InAs active region. (c) 2008 American Institute of Physics.
AB - Self-assembled InSb submonolayer quantum dots (QDs) in an InAs matrix have been grown by molecular beam epitaxy using Sb-2 and As-2 fluxes. The structures exhibit bright midinfrared photoluminescence up to room temperature. Intense room temperature electroluminescence with a peak at wavelength near 3.8 mu m was observed from p-i-n light emitting diode structures containing ten InSb submonolayer QD sheets inserted within the InAs active region. (c) 2008 American Institute of Physics.
UR - http://www.scopus.com/inward/record.url?scp=51349112396&partnerID=8YFLogxK
U2 - 10.1063/1.2976551
DO - 10.1063/1.2976551
M3 - Journal article
VL - 93
SP - 091101
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 1077-3118
IS - 9
ER -