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Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes.

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Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes. / Carrington, P. J.; Solov'ev, V. A.; Zhuang, Q.; Krier, A.; Ivanov, S. V.

In: Applied Physics Letters, Vol. 93, No. 9, 01.09.2008, p. 091101.

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Carrington, P. J. ; Solov'ev, V. A. ; Zhuang, Q. ; Krier, A. ; Ivanov, S. V. / Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes. In: Applied Physics Letters. 2008 ; Vol. 93, No. 9. pp. 091101.

Bibtex

@article{9a2a04d7a8b248a6aeba82d28d5fd51a,
title = "Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes.",
abstract = "Self-assembled InSb submonolayer quantum dots (QDs) in an InAs matrix have been grown by molecular beam epitaxy using Sb-2 and As-2 fluxes. The structures exhibit bright midinfrared photoluminescence up to room temperature. Intense room temperature electroluminescence with a peak at wavelength near 3.8 mu m was observed from p-i-n light emitting diode structures containing ten InSb submonolayer QD sheets inserted within the InAs active region. (c) 2008 American Institute of Physics.",
author = "Carrington, {P. J.} and Solov'ev, {V. A.} and Q. Zhuang and A. Krier and Ivanov, {S. V.}",
year = "2008",
month = sep,
day = "1",
doi = "10.1063/1.2976551",
language = "English",
volume = "93",
pages = "091101",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "9",

}

RIS

TY - JOUR

T1 - Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes.

AU - Carrington, P. J.

AU - Solov'ev, V. A.

AU - Zhuang, Q.

AU - Krier, A.

AU - Ivanov, S. V.

PY - 2008/9/1

Y1 - 2008/9/1

N2 - Self-assembled InSb submonolayer quantum dots (QDs) in an InAs matrix have been grown by molecular beam epitaxy using Sb-2 and As-2 fluxes. The structures exhibit bright midinfrared photoluminescence up to room temperature. Intense room temperature electroluminescence with a peak at wavelength near 3.8 mu m was observed from p-i-n light emitting diode structures containing ten InSb submonolayer QD sheets inserted within the InAs active region. (c) 2008 American Institute of Physics.

AB - Self-assembled InSb submonolayer quantum dots (QDs) in an InAs matrix have been grown by molecular beam epitaxy using Sb-2 and As-2 fluxes. The structures exhibit bright midinfrared photoluminescence up to room temperature. Intense room temperature electroluminescence with a peak at wavelength near 3.8 mu m was observed from p-i-n light emitting diode structures containing ten InSb submonolayer QD sheets inserted within the InAs active region. (c) 2008 American Institute of Physics.

UR - http://www.scopus.com/inward/record.url?scp=51349112396&partnerID=8YFLogxK

U2 - 10.1063/1.2976551

DO - 10.1063/1.2976551

M3 - Journal article

VL - 93

SP - 091101

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 9

ER -