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    Rights statement: This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright 2018 © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/10.1021/acs.nanolett.7b03977

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Room temperature mid-infrared emission from faceted InAsSb multi quantum wells embedded in InAs nanowires

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@article{6ed13f82b03e49c38817811792eab60d,
title = "Room temperature mid-infrared emission from faceted InAsSb multi quantum wells embedded in InAs nanowires",
abstract = "There is considerable interest in the development of InAsSb-based nanowires for infrared photonics due to their high tunability across the infrared spectral range, high mobility, and integration with silicon electronics. However, optical emission is currently limited to low temperatures due to strong nonradiative Auger and surface recombination. Here, we present a new structure based on conical type II InAsSb/InAs multiquantum wells within InAs nanowires which exhibit bright mid-infrared photoluminescence up to room temperature. The nanowires are grown by catalyst-free selective area epitaxy on silicon. This unique geometry confines the electron–hole recombination to within the quantum wells which alleviates the problems associated with recombination via surface states, while the quantum confinement of carriers increases the radiative recombination rate and suppresses Auger recombination. This demonstration will pave the way for the development of new integrated quantum light sources operating in the technologically important mid-infrared spectral range.",
author = "Aiyeshah Alhodaib and Yasir Noori and Carrington, {Peter James} and Ana Sanchez and Thompson, {Michael Dermot} and Young, {Robert James} and Anthony Krier and Marshall, {Andrew Robert Julian}",
note = "This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright 2018 {\textcopyright} American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/10.1021/acs.nanolett.7b03977",
year = "2018",
month = jan
day = "10",
doi = "10.1021/acs.nanolett.7b03977",
language = "English",
volume = "18",
pages = "235--240",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "1",

}

RIS

TY - JOUR

T1 - Room temperature mid-infrared emission from faceted InAsSb multi quantum wells embedded in InAs nanowires

AU - Alhodaib, Aiyeshah

AU - Noori, Yasir

AU - Carrington, Peter James

AU - Sanchez, Ana

AU - Thompson, Michael Dermot

AU - Young, Robert James

AU - Krier, Anthony

AU - Marshall, Andrew Robert Julian

N1 - This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright 2018 © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/10.1021/acs.nanolett.7b03977

PY - 2018/1/10

Y1 - 2018/1/10

N2 - There is considerable interest in the development of InAsSb-based nanowires for infrared photonics due to their high tunability across the infrared spectral range, high mobility, and integration with silicon electronics. However, optical emission is currently limited to low temperatures due to strong nonradiative Auger and surface recombination. Here, we present a new structure based on conical type II InAsSb/InAs multiquantum wells within InAs nanowires which exhibit bright mid-infrared photoluminescence up to room temperature. The nanowires are grown by catalyst-free selective area epitaxy on silicon. This unique geometry confines the electron–hole recombination to within the quantum wells which alleviates the problems associated with recombination via surface states, while the quantum confinement of carriers increases the radiative recombination rate and suppresses Auger recombination. This demonstration will pave the way for the development of new integrated quantum light sources operating in the technologically important mid-infrared spectral range.

AB - There is considerable interest in the development of InAsSb-based nanowires for infrared photonics due to their high tunability across the infrared spectral range, high mobility, and integration with silicon electronics. However, optical emission is currently limited to low temperatures due to strong nonradiative Auger and surface recombination. Here, we present a new structure based on conical type II InAsSb/InAs multiquantum wells within InAs nanowires which exhibit bright mid-infrared photoluminescence up to room temperature. The nanowires are grown by catalyst-free selective area epitaxy on silicon. This unique geometry confines the electron–hole recombination to within the quantum wells which alleviates the problems associated with recombination via surface states, while the quantum confinement of carriers increases the radiative recombination rate and suppresses Auger recombination. This demonstration will pave the way for the development of new integrated quantum light sources operating in the technologically important mid-infrared spectral range.

U2 - 10.1021/acs.nanolett.7b03977

DO - 10.1021/acs.nanolett.7b03977

M3 - Journal article

VL - 18

SP - 235

EP - 240

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 1

ER -