Rights statement: This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright 2018 © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/10.1021/acs.nanolett.7b03977
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Final published version
Licence: CC BY: Creative Commons Attribution 4.0 International License
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
}
TY - JOUR
T1 - Room temperature mid-infrared emission from faceted InAsSb multi quantum wells embedded in InAs nanowires
AU - Alhodaib, Aiyeshah
AU - Noori, Yasir
AU - Carrington, Peter James
AU - Sanchez, Ana
AU - Thompson, Michael Dermot
AU - Young, Robert James
AU - Krier, Anthony
AU - Marshall, Andrew Robert Julian
N1 - This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright 2018 © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/10.1021/acs.nanolett.7b03977
PY - 2018/1/10
Y1 - 2018/1/10
N2 - There is considerable interest in the development of InAsSb-based nanowires for infrared photonics due to their high tunability across the infrared spectral range, high mobility, and integration with silicon electronics. However, optical emission is currently limited to low temperatures due to strong nonradiative Auger and surface recombination. Here, we present a new structure based on conical type II InAsSb/InAs multiquantum wells within InAs nanowires which exhibit bright mid-infrared photoluminescence up to room temperature. The nanowires are grown by catalyst-free selective area epitaxy on silicon. This unique geometry confines the electron–hole recombination to within the quantum wells which alleviates the problems associated with recombination via surface states, while the quantum confinement of carriers increases the radiative recombination rate and suppresses Auger recombination. This demonstration will pave the way for the development of new integrated quantum light sources operating in the technologically important mid-infrared spectral range.
AB - There is considerable interest in the development of InAsSb-based nanowires for infrared photonics due to their high tunability across the infrared spectral range, high mobility, and integration with silicon electronics. However, optical emission is currently limited to low temperatures due to strong nonradiative Auger and surface recombination. Here, we present a new structure based on conical type II InAsSb/InAs multiquantum wells within InAs nanowires which exhibit bright mid-infrared photoluminescence up to room temperature. The nanowires are grown by catalyst-free selective area epitaxy on silicon. This unique geometry confines the electron–hole recombination to within the quantum wells which alleviates the problems associated with recombination via surface states, while the quantum confinement of carriers increases the radiative recombination rate and suppresses Auger recombination. This demonstration will pave the way for the development of new integrated quantum light sources operating in the technologically important mid-infrared spectral range.
U2 - 10.1021/acs.nanolett.7b03977
DO - 10.1021/acs.nanolett.7b03977
M3 - Journal article
VL - 18
SP - 235
EP - 240
JO - Nano Letters
JF - Nano Letters
SN - 1530-6984
IS - 1
ER -