Home > Research > Publications & Outputs > Room-temperature Operation of Low-voltage, Non-...

Research

Associated organisational unit

Electronic data

  • Author accepted manuscript (memory)

    Accepted author manuscript, 1.34 MB, PDF document

    Available under license: CC BY: Creative Commons Attribution 4.0 International License

  • Tizno Sci Rep 9 8950 (2019)

    Final published version, 1.5 MB, PDF document

    Available under license: CC BY: Creative Commons Attribution 4.0 International License

Links

Text available via DOI:

View graph of relations

Room-temperature Operation of Low-voltage, Non-volatile, Compound-semiconductor Memory Cells

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Published

Standard

Room-temperature Operation of Low-voltage, Non-volatile, Compound-semiconductor Memory Cells. / Tizno, Ofogh; Marshall, Andrew; Fernández-Delgado, Natalia et al.
In: Scientific Reports, Vol. 9, 8950, 20.06.2019.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Tizno, O, Marshall, A, Fernández-Delgado, N, Herrera, M, Molina, SI & Hayne, M 2019, 'Room-temperature Operation of Low-voltage, Non-volatile, Compound-semiconductor Memory Cells', Scientific Reports, vol. 9, 8950. https://doi.org/10.1038/s41598-019-45370-1

APA

Tizno, O., Marshall, A., Fernández-Delgado, N., Herrera, M., Molina, S. I., & Hayne, M. (2019). Room-temperature Operation of Low-voltage, Non-volatile, Compound-semiconductor Memory Cells. Scientific Reports, 9, Article 8950. https://doi.org/10.1038/s41598-019-45370-1

Vancouver

Tizno O, Marshall A, Fernández-Delgado N, Herrera M, Molina SI, Hayne M. Room-temperature Operation of Low-voltage, Non-volatile, Compound-semiconductor Memory Cells. Scientific Reports. 2019 Jun 20;9:8950. doi: 10.1038/s41598-019-45370-1

Author

Tizno, Ofogh ; Marshall, Andrew ; Fernández-Delgado, Natalia et al. / Room-temperature Operation of Low-voltage, Non-volatile, Compound-semiconductor Memory Cells. In: Scientific Reports. 2019 ; Vol. 9.

Bibtex

@article{3976fa31e7f04db6a2c7af72aebc57fa,
title = "Room-temperature Operation of Low-voltage, Non-volatile, Compound-semiconductor Memory Cells",
abstract = "Whilst the different forms of conventional (charge-based) memories are well suited to their individual roles in computers and other electronic devices, flaws in their properties mean that intensive research into alternative, or emerging, memories continues. In particular, the goal of simultaneously achieving the contradictory requirements of non-volatility and fast, low-voltage (low-energy) switching has proved challenging. Here, we report an oxide-free, floating-gate memory cell based on III-V semiconductor heterostructures with a junctionless channel and non-destructive read of the stored data. Non-volatile data retention of at least 104 s in combination with switching at ≤2.6 V is achieved by use of the extraordinary 2.1 eV conduction band offsets of InAs/AlSb and a triple-barrier resonant tunnelling structure. The combination of low-voltage operation and small capacitance implies intrinsic switching energy per unit area that is 100 and 1000 times smaller than dynamic random access memory and Flash respectively. The device may thus be considered as a new emerging memory with considerable potential.",
author = "Ofogh Tizno and Andrew Marshall and Natalia Fern{\'a}ndez-Delgado and Miriam Herrera and Molina, {Sergio I.} and Manus Hayne",
year = "2019",
month = jun,
day = "20",
doi = "10.1038/s41598-019-45370-1",
language = "English",
volume = "9",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",

}

RIS

TY - JOUR

T1 - Room-temperature Operation of Low-voltage, Non-volatile, Compound-semiconductor Memory Cells

AU - Tizno, Ofogh

AU - Marshall, Andrew

AU - Fernández-Delgado, Natalia

AU - Herrera, Miriam

AU - Molina, Sergio I.

AU - Hayne, Manus

PY - 2019/6/20

Y1 - 2019/6/20

N2 - Whilst the different forms of conventional (charge-based) memories are well suited to their individual roles in computers and other electronic devices, flaws in their properties mean that intensive research into alternative, or emerging, memories continues. In particular, the goal of simultaneously achieving the contradictory requirements of non-volatility and fast, low-voltage (low-energy) switching has proved challenging. Here, we report an oxide-free, floating-gate memory cell based on III-V semiconductor heterostructures with a junctionless channel and non-destructive read of the stored data. Non-volatile data retention of at least 104 s in combination with switching at ≤2.6 V is achieved by use of the extraordinary 2.1 eV conduction band offsets of InAs/AlSb and a triple-barrier resonant tunnelling structure. The combination of low-voltage operation and small capacitance implies intrinsic switching energy per unit area that is 100 and 1000 times smaller than dynamic random access memory and Flash respectively. The device may thus be considered as a new emerging memory with considerable potential.

AB - Whilst the different forms of conventional (charge-based) memories are well suited to their individual roles in computers and other electronic devices, flaws in their properties mean that intensive research into alternative, or emerging, memories continues. In particular, the goal of simultaneously achieving the contradictory requirements of non-volatility and fast, low-voltage (low-energy) switching has proved challenging. Here, we report an oxide-free, floating-gate memory cell based on III-V semiconductor heterostructures with a junctionless channel and non-destructive read of the stored data. Non-volatile data retention of at least 104 s in combination with switching at ≤2.6 V is achieved by use of the extraordinary 2.1 eV conduction band offsets of InAs/AlSb and a triple-barrier resonant tunnelling structure. The combination of low-voltage operation and small capacitance implies intrinsic switching energy per unit area that is 100 and 1000 times smaller than dynamic random access memory and Flash respectively. The device may thus be considered as a new emerging memory with considerable potential.

U2 - 10.1038/s41598-019-45370-1

DO - 10.1038/s41598-019-45370-1

M3 - Journal article

VL - 9

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

M1 - 8950

ER -